JAN2N2219
For Reference Only
| Part Number | JAN2N2219 |
| PNEDA Part # | JAN2N2219 |
| Description | TRANS NPN 30V 0.8A |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 2,286 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JAN2N2219 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JAN2N2219 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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JAN2N2219 Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/251 |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Power - Max | 800mW |
| Frequency - Transition | - |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V Power - Max 1.05W Frequency - Transition 300MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package SOT-223 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 300mA Voltage - Collector Emitter Breakdown (Max) 15V Vce Saturation (Max) @ Ib, Ic 500mV @ 30mA, 300mA Current - Collector Cutoff (Max) 500nA DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 30mA, 400mV Power - Max 625mW Frequency - Transition 350MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
