Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Records 64,903

Page 359/2164

Part Number	Description	In Stock
BDP949H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 3A SOT223 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	In Stock3,580
BDP950E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 3A SOT-223 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	In Stock6,588
BDP950H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 3A SOT223 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	In Stock6,642
BDP953E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single TRANS NPN 100V 3A SOT-223 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	In Stock8,622
BDP953H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single TRANS NPN 100V 3A SOT223 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	In Stock7,470
BDP954E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single TRANS PNP 100V 3A SOT-223 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	In Stock3,582
BDP954H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single TRANS PNP 100V 3A SOT223 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	In Stock4,428
BDT60B-S Bourns	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 100V 4A Manufacturer: Bourns Inc. Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock6,156
BDT60C-S Bourns	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 120V 4A Manufacturer: Bourns Inc. Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock8,478
BDT60-S Bourns	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 60V 4A Manufacturer: Bourns Inc. Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock6,246
BDT61A-S Bourns	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 80V 4A Manufacturer: Bourns Inc. Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock6,318
BDT61B-S Bourns	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 4A Manufacturer: Bourns Inc. Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock3,960
BDT61C-S Bourns	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 120V 4A Manufacturer: Bourns Inc. Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock8,694
BDT61-S Bourns	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 60V 4A Manufacturer: Bourns Inc. Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock6,678
BDV64 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single POWER TRANSISTOR PNP TO218 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: 60MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: TO-218	In Stock6,570
BDV64A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single POWER TRANSISTOR PNP TO218 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: 60MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: TO-218	In Stock5,778
BDV64A-S Bourns	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 60V 12A SOT93 Manufacturer: Bourns Inc. Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	In Stock4,230
BDV64B Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single POWER TRANSISTOR PNP TO218 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: 60MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: TO-218	In Stock7,326
BDV64B ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 100V 10A TO-218 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	In Stock4,608
BDV64BG ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 100V 10A TO247 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock7,920
BDV64B-S Bourns	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 100V 12A Manufacturer: Bourns Inc. Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	In Stock8,370
BDV64C-S Bourns	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 120V 12A Manufacturer: Bourns Inc. Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	In Stock5,346
BDV64-S Bourns	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 60V 12A Manufacturer: Bourns Inc. Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	In Stock8,226
BDV65 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single POWER TRANSISTOR NPN TO218 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: 60MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: TO-218	In Stock4,662
BDV65A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single POWER TRANSISTOR NPN TO218 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: 60MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: TO-218	In Stock2,304
BDV65A-S Bourns	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 80V 12A Manufacturer: Bourns Inc. Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	In Stock5,040
BDV65B Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single POWER TRANSISTOR NPN TO218 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: 60MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: TO-218	In Stock8,802
BDV65B ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 10A TO-218 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	In Stock4,482
BDV65BG ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 10A TO247 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock7,452
BDV65B-S Bourns	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 12A Manufacturer: Bourns Inc. Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	In Stock8,874

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