BDV65B
For Reference Only
| Part Number | BDV65B |
| PNEDA Part # | BDV65B_105 |
| Description | POWER TRANSISTOR NPN TO218 |
| Manufacturer | Central Semiconductor Corp |
| Unit Price | Request a Quote |
| In Stock | 8,802 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BDV65B Resources
| Brand | Central Semiconductor Corp |
| ECAD Module |
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| Mfr. Part Number | BDV65B |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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BDV65B Specifications
| Manufacturer | Central Semiconductor Corp |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 12A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V |
| Power - Max | 125W |
| Frequency - Transition | 60MHz |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-218-3 |
| Supplier Device Package | TO-218 |
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Manufacturer Central Semiconductor Corp Series - Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 220V Vce Saturation (Max) @ Ib, Ic 100mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA, 5V Power - Max 350mW Frequency - Transition 300MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
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