Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 235/2164

Part Number	Description	In Stock
2SC3649S-TD-H ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 160V 1.5A PCP Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock2,826
2SC3649T-TD-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 160V 1.5A SOT89-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock20,220
2SC3649T-TD-H ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 160V 1.5A PCP Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock16,986
2SC3665-Y,T2F(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V SC71 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock4,086
2SC3665-Y,T2NSF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V SC71 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock2,484
2SC3665-Y(T2NSW,FM Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V SC71 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock6,354
2SC3665-Y,T2YNSF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V SC71 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock7,668
2SC3668-O,T2CLAF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V SC71 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock5,184
2SC3668-Y,F2PANF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V SC71 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock3,186
2SC3668-Y,T2F(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V SC71 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock4,320
2SC3668-Y,T2F(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V SC71 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock3,400
2SC3668-Y,T2WNLF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V SC71 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock5,310
2SC3669-Y(T2OMI,FM Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 80V SC71 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock7,686
2SC3669-Y,T2PASF(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 80V SC71 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock3,474
2SC3672-O(T2ASH,FM Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 100MA 300V SC71 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 1W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock6,264
2SC370400L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 10V 0.08A MINI-3P Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Power - Max: 200mW Frequency - Transition: 6GHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	In Stock24,432
2SC370700L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 7V 0.01A MINI-3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 10mA Voltage - Collector Emitter Breakdown (Max): 7V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 1V Power - Max: 50mW Frequency - Transition: 4GHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	In Stock28,668
2SC3743 Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 800V 3A TO-220F Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 800V Vce Saturation (Max) @ Ib, Ic: 600mV @ 160mA, 800mA Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 4MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-A1	In Stock6,912
2SC37570RL Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.1A MINI-3P Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 1V Power - Max: 200mW Frequency - Transition: 450MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	In Stock6,192
2SC382900L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 10V 0.08A MINI-3P Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Power - Max: 200mW Frequency - Transition: 6GHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	In Stock2,610
2SC3835 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 120V 7A TO3P Manufacturer: Sanken Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 7A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V Power - Max: 70W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock17,862
2SC3837KT146N Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 20V 0.05A SOT-346 Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V Power - Max: 200mW Frequency - Transition: 1.5GHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	In Stock6,228
2SC3837KT146P Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 20V 0.05A SOT-346 Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V Power - Max: 200mW Frequency - Transition: 1.5GHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	In Stock58,032
2SC3838KT146N Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 11V 0.05A SOT-346 Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 11V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V Power - Max: 200mW Frequency - Transition: 3.2GHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	In Stock4,860
2SC3838KT146P Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 11V 0.05A SOT-346 Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 11V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V Power - Max: 200mW Frequency - Transition: 3.2GHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	In Stock5,238
2SC3851 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 4A TO-220F Manufacturer: Sanken Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V Power - Max: 25W Frequency - Transition: 15MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	In Stock32,190
2SC3851A Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 4A TO220F Manufacturer: Sanken Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V Power - Max: 25W Frequency - Transition: 15MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	In Stock36,258
2SC3852 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 3A TO220F Manufacturer: Sanken Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V Power - Max: 25W Frequency - Transition: 15MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	In Stock16,944
2SC3852A Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 3A TO220F Manufacturer: Sanken Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V Power - Max: 25W Frequency - Transition: 15MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	In Stock12,360
2SC3856 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 180V 15A TO-3P Manufacturer: Sanken Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V Power - Max: 130W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock7,632

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