Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 232/2164

Part Number	Description	In Stock
2SC2655-Y(TE6,F,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock5,526
2SC2655-Y,WNLF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock7,632
2SC2668-O-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 550MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	In Stock2,322
2SC2668-R-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 550MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	In Stock3,834
2SC2668-Y-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 550MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	In Stock2,430
2SC2705-O(TE6,F,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 0.05A TO-92MOD Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	In Stock2,520
2SC2705-O(TPE6,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 0.05A TO-92MOD Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	In Stock7,920
2SC2705-Y(TE6,F,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 0.05A TO-92 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	In Stock8,010
2SC2712-BL,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANSISTOR NPN 50V 150MA S-MINI Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock2,538
2SC2712-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.15A S-MINI Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock281,592
2SC2712-OTE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.15A S-MINI Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	In Stock6,174
2SC2712-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.15A S-MINI Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock84,600
2SC2713-BL,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 120V 0.1A S-MINI Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	In Stock7,524
2SC2713-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 120V 0.1A S-MINI Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	In Stock74,946
2SC2812N6-CPA-TB-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.15A CP Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	In Stock4,176
2SC2812N6-TB-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.15A CP Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	In Stock5,652
2SC2837 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 10A TO-3P Manufacturer: Sanken Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3V, 4V Power - Max: 100W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock19,536
2SC2859-GR(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.5A S-MINI Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock7,992
2SC2859-GR-TP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	In Stock2,502
2SC2859-O(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.5A S-MINI Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock6,030
2SC2859-O-TP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	In Stock7,632
2SC2859-Y(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.5A S-MINI Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock5,598
2SC2881-O-TP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANS PREBIAS NPN 120V SOT89 Manufacturer: Micro Commercial Co Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock4,356
2SC2883-O-TP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock5,076
2SC2921 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 160V 15A MT200 Manufacturer: Sanken Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V Power - Max: 150W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-ESIP Supplier Device Package: MT-200	In Stock6,672
2SC2922 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 180V 17A MT-200 Manufacturer: Sanken Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 17A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 2V @ 800mA, 8A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8V, 4V Power - Max: 200W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-ESIP Supplier Device Package: MT-200	In Stock8,082
2SC29250SA Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.7A TO-92 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 150mA, 10V Power - Max: 750mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-B1	In Stock8,244
2SC2983-O-TP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock8,496
2SC2983-Y-TP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANS NPN 160V 1.5A DPAK Manufacturer: Micro Commercial Co Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock6,804
2SC2988 Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 16V 0.5A TO-126 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 16V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 13.5V Power - Max: 5W Frequency - Transition: 1GHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126B-A1	In Stock6,642

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