Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - IGBTs - Arrays (18)
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Transistors - Special Purpose (162)

Records 64,903

Page 2118/2164

Part Number	Description	In Stock
RJH65T04BDPMA0#T2F Renesas Electronics America	Transistors - IGBTs - Single IGBT TRENCH 650V 60A TO-3PFP Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A Power - Max: 65W Switching Energy: 360µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 74nC Td (on/off) @ 25°C: 35ns/115ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: SC-94 Supplier Device Package: TO-3PFP	In Stock5,166
RJH65T14DPQ-A0#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT TRENCH 650V 100A TO247A Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A Power - Max: 250W Switching Energy: 1.3mJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 38ns/125ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 250ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247A	In Stock88
RJH65T46DPQ-A0#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT TRENCH 650V 80A TO247A Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 340.9W Switching Energy: 450µJ (on), 550µJ (off) Input Type: Standard Gate Charge: 138nC Td (on/off) @ 25°C: 45ns/170ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247A	In Stock4,734
RJH65T47DPQ-A0#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT TRENCH 650V 90A TO247A Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Power - Max: 375W Switching Energy: 520µJ (on), 560µJ (off) Input Type: Standard Gate Charge: 127nC Td (on/off) @ 25°C: 45ns/190ns Test Condition: 400V, 45A, 10Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247A	In Stock6,372
RJP4009ANS-01#Q6 Renesas Electronics America	Transistors - IGBTs - Single IGBT 400V Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 9V @ 2.5V, 150A Power - Max: 1.8W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Supplier Device Package: 8-VSON (3x4.4)	In Stock4,950
RJP4010AGE-00#P5 Renesas Electronics America	Transistors - IGBTs - Single IGBT 400V 1.6W TSOJ8 Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 9V @ 3V, 150A Power - Max: 1.6W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOJ (0.094", 2.40mm Width) Supplier Device Package: 8-TSOJ	In Stock4,050
RJP4301APP-M0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 430V TO200FL Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 10V @ 26V, 200A Power - Max: 30W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 50ns/100ns Test Condition: 300V, 200A, 30Ohm, 26V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FL	In Stock8,676
RJP5001APP-M0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 500V TO-220FN Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 500V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 10V @ 12V, 300A Power - Max: 45W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 100ns/200ns Test Condition: 300V, 300A, 30Ohm, 12V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FL	In Stock3,418
RJP6085DPK-00#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 40A 178.5W TO-3P Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A Power - Max: 178.5W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock4,500
RJP6085DPN-00#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 40A 178.5W TO-220AB Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A Power - Max: 178.5W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock4,230
RJP60D0DPE-00#J3 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 45A 122W LDPAK Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A Power - Max: 122W Switching Energy: - Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 35ns/90ns Test Condition: 300V, 22A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-83 Supplier Device Package: 4-LDPAK	In Stock18,000
RJP60D0DPK-00#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 45A 140W TO-3P Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A Power - Max: 140W Switching Energy: - Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 35ns/90ns Test Condition: 300V, 22A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock7,362
RJP60D0DPM-00#T1 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 45A 40W TO-3PFM Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A Power - Max: 40W Switching Energy: - Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 35ns/90ns Test Condition: 300V, 22A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock5,238
RJP60D0DPP-M0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 45A 35W TO-220FL Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A Power - Max: 35W Switching Energy: - Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 35ns/90ns Test Condition: 300V, 22A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FL	In Stock5,040
RJP60F0DPE-00#J3 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 50A 122W LDPAK Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 25A Power - Max: 122W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 46ns/70ns Test Condition: 400V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-83 Supplier Device Package: 4-LDPAK	In Stock7,452
RJP60F0DPM-00#T1 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 50A 40W TO-3PFM Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 25A Power - Max: 40W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 46ns/70ns Test Condition: 400V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock3,474
RJP60F4DPM-00#T1 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 60A 41.2W TO-3PFM Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A Power - Max: 41.2W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 45ns/70ns Test Condition: 400V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock8,946
RJP60F5DPK-01#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 80A 260.4W Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Power - Max: 260.4W Switching Energy: - Input Type: Standard Gate Charge: 74nC Td (on/off) @ 25°C: 53ns/90ns Test Condition: 400V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock6,300
RJP60F5DPM-00#T1 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 80A 45W TO-3PFM Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Power - Max: 45W Switching Energy: - Input Type: Standard Gate Charge: 74nC Td (on/off) @ 25°C: 53ns/90ns Test Condition: 400V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock8,712
RJP60V0DPM-00#T1 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 45A 40W TO-3PFM Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 22A Power - Max: 40W Switching Energy: - Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 45ns/100ns Test Condition: 300V, 22A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock5,688
RJP65T43DPQ-A0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT TRENCH 650V 60A TO247A Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: 150W Switching Energy: 170µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 69nC Td (on/off) @ 25°C: 35ns/105ns Test Condition: 400V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247A	In Stock4,176
RJP65T54DPM-A0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT TRENCH 650V 60A TO-3PFP Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A Power - Max: 63.5W Switching Energy: 330µJ (on), 760µJ (off) Input Type: Standard Gate Charge: 72nC Td (on/off) @ 25°C: 35ns/120ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: SC-94 Supplier Device Package: TO-3PFP	In Stock3,744
RJP65T54DPM-E0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT TRENCH TO-3FP Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A Power - Max: 63.5W Switching Energy: 330µJ (on), 760µJ (off) Input Type: Standard Gate Charge: 72nC Td (on/off) @ 25°C: 35ns/120ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PF	In Stock8,712
SGB02N120ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 6.2A 62W TO263-3 Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 6.2A Current - Collector Pulsed (Icm): 9.6A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A Power - Max: 62W Switching Energy: 220µJ Input Type: Standard Gate Charge: 11nC Td (on/off) @ 25°C: 23ns/260ns Test Condition: 800V, 2A, 91Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	In Stock2,100
SGB02N60ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 6A 30W TO263-3 Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 6A Current - Collector Pulsed (Icm): 12A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A Power - Max: 30W Switching Energy: 64µJ Input Type: Standard Gate Charge: 14nC Td (on/off) @ 25°C: 20ns/259ns Test Condition: 400V, 2A, 118Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	In Stock8,658
SGB06N60ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 12A 68W TO263-3 Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A Power - Max: 68W Switching Energy: 215µJ Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 25ns/220ns Test Condition: 400V, 6A, 50Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	In Stock2,412
SGB07N120ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 16.5A 125W TO263-3-2 Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 16.5A Current - Collector Pulsed (Icm): 27A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A Power - Max: 125W Switching Energy: 1mJ Input Type: Standard Gate Charge: 70nC Td (on/off) @ 25°C: 27ns/440ns Test Condition: 800V, 8A, 47Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	In Stock5,058
SGB10N60AATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 20A 92W TO263-3 Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A Power - Max: 92W Switching Energy: 320µJ Input Type: Standard Gate Charge: 52nC Td (on/off) @ 25°C: 28ns/178ns Test Condition: 400V, 10A, 25Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	In Stock2,412
SGB15N120ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 198W TO263-3 Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A Power - Max: 198W Switching Energy: 1.9mJ Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 18ns/580ns Test Condition: 800V, 15A, 33Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	In Stock4,464
SGB15N60ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 139W TO263-3 Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 62A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 139W Switching Energy: 570µJ Input Type: Standard Gate Charge: 76nC Td (on/off) @ 25°C: 32ns/234ns Test Condition: 400V, 15A, 21Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	In Stock2,718

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