Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - IGBTs - Arrays (18)
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Records 64,903

Page 2116/2164

Part Number	Description	In Stock
RJH1CV6DPK-00#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1200V 60A 290W TO-3P Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A Power - Max: 290W Switching Energy: 2.3mJ (on), 1.7mJ (off) Input Type: Standard Gate Charge: 105nC Td (on/off) @ 25°C: 46ns/125ns Test Condition: 600V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): 180ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock6,840
RJH1CV7DPK-00#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1200V 70A 320W TO-3P Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A Power - Max: 320W Switching Energy: 3.2mJ (on), 2.5mJ (off) Input Type: Standard Gate Charge: 166nC Td (on/off) @ 25°C: 53ns/185ns Test Condition: 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock5,886
RJH1CV7DPQ-E0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1200V 70A 320W TO247 Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A Power - Max: 320W Switching Energy: 3.2mJ (on), 2.5mJ (off) Input Type: Standard Gate Charge: 166nC Td (on/off) @ 25°C: 53ns/185ns Test Condition: 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock3,598
RJH60A01RDPD-A0#J2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 5A Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 5A Power - Max: 29.4W Switching Energy: 130µJ (on), 70µJ (off) Input Type: Standard Gate Charge: 11nC Td (on/off) @ 25°C: 30ns/40ns Test Condition: 300V, 5A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	In Stock8,802
RJH60A81RDPD-A0#J2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 5A Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A Power - Max: 29.4W Switching Energy: 130µJ (on), 60µJ (off) Input Type: Standard Gate Charge: 11nC Td (on/off) @ 25°C: 30ns/40ns Test Condition: 300V, 5A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	In Stock8,910
RJH60A83RDPD-A0#J2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 10A Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A Power - Max: 51W Switching Energy: 230µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 19.7nC Td (on/off) @ 25°C: 31ns/54ns Test Condition: 300V, 10A, 5Ohm, 15V Reverse Recovery Time (trr): 130ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	In Stock6,804
RJH60A83RDPE-00#J3 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 20A 52W LDPAK Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A Power - Max: 52W Switching Energy: 230µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 19.7nC Td (on/off) @ 25°C: 31ns/54ns Test Condition: 300V, 10A, 5Ohm, 15V Reverse Recovery Time (trr): 130ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-83 Supplier Device Package: 4-LDPAK	In Stock2,214
RJH60A83RDPN-E0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 20A TO-220AB Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 150ns Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock6,852
RJH60A83RDPP-M0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 20A 30W TO-220FL Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A Power - Max: 30W Switching Energy: 230µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 19.7nC Td (on/off) @ 25°C: 31ns/54ns Test Condition: 300V, 10A, 5Ohm, 15V Reverse Recovery Time (trr): 130ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FL	In Stock7,164
RJH60A85RDPE-00#J3 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 30A 113W LDPAK Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A Power - Max: 113W Switching Energy: 430µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 56nC Td (on/off) @ 25°C: 40ns/86ns Test Condition: 300V, 15A, 5Ohm, 15V Reverse Recovery Time (trr): 160ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-83 Supplier Device Package: 4-LDPAK	In Stock8,694
RJH60D0DPK-00#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 45A 140W TO3P Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A Power - Max: 140W Switching Energy: 230µJ (on), 290µJ (off) Input Type: Standard Gate Charge: 46nC Td (on/off) @ 25°C: 40ns/80ns Test Condition: 300V, 22A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock7,650
RJH60D0DPM-00#T1 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 45A 40W TO3PFM Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A Power - Max: 40W Switching Energy: 230µJ (on), 290µJ (off) Input Type: Standard Gate Charge: 46nC Td (on/off) @ 25°C: 40ns/80ns Test Condition: 300V, 22A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock3,834
RJH60D1DPE-00#J3 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 20A 52W LDPAK Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: 52W Switching Energy: 100µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 30ns/42ns Test Condition: 300V, 10A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-83 Supplier Device Package: 4-LDPAK	In Stock3,526
RJH60D1DPP-E0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 10A Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: 30W Switching Energy: 100µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 30ns/42ns Test Condition: 300V, 10A, 5Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	In Stock8,136
RJH60D1DPP-M0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 20A 20.8W TO220FL Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: 30W Switching Energy: 100µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 30ns/42ns Test Condition: 300V, 10A, 5Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FL	In Stock4,392
RJH60D2DPE-00#J3 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 25A 63W LDPAK Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A Power - Max: 63W Switching Energy: 100µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 32ns/85ns Test Condition: 300V, 12A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-83 Supplier Device Package: 4-LDPAK	In Stock4,896
RJH60D2DPP-A0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 10A TO-220 Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,280
RJH60D2DPP-M0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 25A 27.2W TO220FL Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A Power - Max: 34W Switching Energy: 100µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 32ns/85ns Test Condition: 300V, 12A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FL	In Stock6,714
RJH60D3DPE-00#J3 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 35A LDPAK Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 17A Power - Max: 113W Switching Energy: 200µJ (on), 210µJ (off) Input Type: Standard Gate Charge: 37nC Td (on/off) @ 25°C: 35ns/80ns Test Condition: 300V, 17A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-83 Supplier Device Package: 4-LDPAK	In Stock7,092
RJH60D3DPP-M0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 35A 30W TO220FL Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 17A Power - Max: 40W Switching Energy: 200µJ (on), 210µJ (off) Input Type: Standard Gate Charge: 37nC Td (on/off) @ 25°C: 35ns/80ns Test Condition: 300V, 17A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FL	In Stock2,577
RJH60D5BDPQ-E0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 75A 200W TO-247 Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A Power - Max: 200W Switching Energy: 400µJ (on), 810µJ (off) Input Type: Standard Gate Charge: 78nC Td (on/off) @ 25°C: 50ns/130ns Test Condition: 300V, 37A, 5Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock7,074
RJH60D5DPK-00#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 75A 200W TO3P Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A Power - Max: 200W Switching Energy: 650µJ (on), 400µJ (off) Input Type: Standard Gate Charge: 78nC Td (on/off) @ 25°C: 50ns/135ns Test Condition: 300V, 37A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock8,208
RJH60D5DPM-00#T1 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 75A 45W TO3PFM Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A Power - Max: 45W Switching Energy: 650µJ (on), 270µJ (off) Input Type: Standard Gate Charge: 78nC Td (on/off) @ 25°C: 50ns/135ns Test Condition: 300V, 37A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock8,838
RJH60D6DPK-00#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 80A 260W TO3P Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Power - Max: 260W Switching Energy: 850µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 104nC Td (on/off) @ 25°C: 50ns/160ns Test Condition: 300V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock3,618
RJH60D6DPM-00#T1 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 80A 50W TO-3PFM Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Power - Max: 50W Switching Energy: 850µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 104nC Td (on/off) @ 25°C: 50ns/160ns Test Condition: 300V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock8,046
RJH60D7ADPK-00#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 90A 300W TO-3P Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Power - Max: 300W Switching Energy: 1.1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 60ns/190ns Test Condition: 300V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock8,676
RJH60D7BDPQ-E0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 90A 300W TO-247 Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Power - Max: 300W Switching Energy: 700µJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: 60ns/180ns Test Condition: 300V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock6,246
RJH60D7DPK-00#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 90A 300W TO3P Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Power - Max: 300W Switching Energy: 1.1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 60ns/190ns Test Condition: 300V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock5,742
RJH60D7DPM-00#T1 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 90A 55W TO3PFM Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Power - Max: 55W Switching Energy: 1.1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 60ns/190ns Test Condition: 300V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock8,496
RJH60D7DPQ-E0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 90A 300W TO-247 Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Power - Max: 300W Switching Energy: 1.1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 60ns/190ns Test Condition: 300V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock8,118

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