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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
Description
In Stock
Quantity
STE48NM60
STE48NM60

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 48A ISOTOP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 22.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: ISOTOP
In Stock2,250
STE53NC50
STE53NC50

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 53A ISOTOP

  • Manufacturer: STMicroelectronics
  • Series: PowerMESH™ II
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: ISOTOP
In Stock8,910
STE60N105DK5
STE60N105DK5

STMicroelectronics

Transistors - FETs, MOSFETs - Single

ISOTOP PARALL.

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ DK5
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1050V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 680W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP
  • Package / Case: SOT-227-4, miniBLOC
In Stock4,752
STE70NM50
STE70NM50

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 70A ISOTOP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 266nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: ISOTOP
In Stock5,490
STE70NM60
STE70NM60

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 70A ISOTOP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 266nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: ISOTOP
In Stock5,148
STE88N65M5
STE88N65M5

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 88A ISOTOP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ V
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 8825pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 494W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP
  • Package / Case: SOT-227-4
In Stock4,590
STF100N10F7
STF100N10F7

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N CH 100V 45A TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: DeepGATE™, STripFET™ VII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 22.5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4369pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock2,034
STF100N6F7
STF100N6F7

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 46A F7 TO220FP

  • Manufacturer: STMicroelectronics
  • Series: STripFET™ F7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock7,752
STF10LN80K5
STF10LN80K5

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 8A TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock13,182
STF10N105K5
STF10N105K5

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1050V 6A TO220FP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ K5
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1050V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
  • Vgs (Max): 30V
  • Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock16,380
STF10N60DM2
STF10N60DM2

STMicroelectronics

Transistors - FETs, MOSFETs - Single

N-CHANNEL 600 V, 0.26 OHM TYP.,

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ DM2
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock15,576
STF10N60M2
STF10N60M2

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II Plus
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock27,024
STF10N62K3
STF10N62K3

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 620V 8.4A TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: SuperMESH3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock5,256
STF10N65K3
STF10N65K3

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 10A TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: SuperMESH3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 3.6A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock19,968
STF10N80K5
STF10N80K5

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 9A TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock17,148
STF10N95K5
STF10N95K5

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 950V 8A TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: SuperMESH5™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock6,120
STF10NK50Z
STF10NK50Z

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 9A TO220FP

  • Manufacturer: STMicroelectronics
  • Series: SuperMESH™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 700mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 39.2nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1219pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock6,372
STF10NM50N
STF10NM50N

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 7.0A TO220FP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 630mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock21,264
STF10NM60N
STF10NM60N

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 10A TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock18,384
STF10NM60ND
STF10NM60ND

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 8A TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: FDmesh™ II
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock11,076
STF10NM65N
STF10NM65N

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 9A TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock2,340
STF10P6F6
STF10P6F6

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 10A TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: DeepGATE™, STripFET™ VI
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 48V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock20,256
STF110N10F7
STF110N10F7

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: DeepGATE™, STripFET™ VII
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 22.5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5117pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock4,050
STF11N50M2
STF11N50M2

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 8A TO220FP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II Plus
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock21,276
STF11N52K3
STF11N52K3

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 525V 10A TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: SuperMESH3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 510mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock2,214
STF11N60DM2
STF11N60DM2

STMicroelectronics

Transistors - FETs, MOSFETs - Single

N-CHANNEL 600 V, 0.26 OHM TYP.,

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ DM2
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 614pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock18,006
STF11N60M2-EP
STF11N60M2-EP

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 7.5A TO220FP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ M2-EP
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 595mOhm @ 3.75A, 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock5,022
STF11N65K3
STF11N65K3

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 11.0A TO220FP

  • Manufacturer: STMicroelectronics
  • Series: SuperMESH3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock3,600
STF11N65M2
STF11N65M2

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 7A TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II Plus
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock8,532
STF11N65M5
STF11N65M5

STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N CH 650V 9A TO-220FP

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ V
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 644pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
In Stock7,236