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STF11N60M2-EP

STF11N60M2-EP

For Reference Only

Part Number STF11N60M2-EP
PNEDA Part # STF11N60M2-EP
Description MOSFET N-CH 600V 7.5A TO220FP
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,022
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STF11N60M2-EP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTF11N60M2-EP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STF11N60M2-EP, STF11N60M2-EP Datasheet (Total Pages: 14, Size: 301.07 KB)
PDFSTF11N60M2-EP Datasheet Cover
STF11N60M2-EP Datasheet Page 2 STF11N60M2-EP Datasheet Page 3 STF11N60M2-EP Datasheet Page 4 STF11N60M2-EP Datasheet Page 5 STF11N60M2-EP Datasheet Page 6 STF11N60M2-EP Datasheet Page 7 STF11N60M2-EP Datasheet Page 8 STF11N60M2-EP Datasheet Page 9 STF11N60M2-EP Datasheet Page 10 STF11N60M2-EP Datasheet Page 11

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STF11N60M2-EP Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2-EP
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs595mOhm @ 3.75A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.4nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds390pF @ 100V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

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