Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1772/2164

Part Number	Description	In Stock
SIR166DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 40A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V FET Feature: - Power Dissipation (Max): 5W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock2,898
SIR167DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CHAN 30V POWERPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® Gen III FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V FET Feature: - Power Dissipation (Max): 65.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock6,210
SIR168DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 40A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 15V FET Feature: - Power Dissipation (Max): 5W (Ta), 34.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock5,688
SIR170DP-T1-RE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100 V PWRPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® Gen IV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6195pF @ 50V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock3,618
SIR172ADP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 24A 8-SO Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1515pF @ 15V FET Feature: - Power Dissipation (Max): 29.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock4,014
SIR172DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.9mOhm @ 16.1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 15V FET Feature: - Power Dissipation (Max): 29.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock5,400
SIR180DP-T1-RE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 60V POWERPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® Gen IV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 2.05mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4030pF @ 30V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock8,802
SIR182DP-T1-RE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 60A POWERPAKSO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® Gen IV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 30V FET Feature: - Power Dissipation (Max): 69.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock29,700
SIR184DP-T1-RE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 60V POWERPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® Gen IV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 30V FET Feature: - Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock7,812
SIR186DP-T1-RE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 60A POWERPAKSO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® Gen IV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V FET Feature: - Power Dissipation (Max): 57W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock7,668
SIR188DP-T1-RE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 60V Manufacturer: Vishay Siliconix Series: TrenchFET® Gen IV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 25.5A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 3.85mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 30V FET Feature: - Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock2,178
SIR330DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 35A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V FET Feature: - Power Dissipation (Max): 5W (Ta), 27.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock6,966
SIR401DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 50A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 9080pF @ 10V FET Feature: - Power Dissipation (Max): 5W (Ta), 39W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock3,580
SIR402DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 35A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V FET Feature: - Power Dissipation (Max): 4.2W (Ta), 36W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock8,352
SIR403EDP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 40A PPAK 8SO Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 15V FET Feature: - Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock3,492
SIR404DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 60A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 8130pF @ 10V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock59,646
SIR406DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 40A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2083pF @ 10V FET Feature: - Power Dissipation (Max): 5W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock3,544
SIR408DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 44.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock2,376
SIR410DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 35A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V FET Feature: - Power Dissipation (Max): 4.2W (Ta), 36W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock160,530
SIR412DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 20A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 15.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock2,142
SIR414DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 50A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock5,238
SIR416DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 50A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock5,238
SIR418DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 40A PPAK SO-8 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 20V FET Feature: - Power Dissipation (Max): 39W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock52,518
SIR422DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 40A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 20V FET Feature: - Power Dissipation (Max): 5W (Ta), 34.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock138,204
SIR424DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 30A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock109,230
SIR426DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 30A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock156,522
SIR432DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 28.4A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 30.6mOhm @ 8.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V FET Feature: - Power Dissipation (Max): 5W (Ta), 54W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock6,426
SIR436DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 40A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V FET Feature: - Power Dissipation (Max): 5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock7,164
SIR438DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 60A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock7,650
SIR440DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 60A PPAK SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	In Stock6,282

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