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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
Description
In Stock
Quantity
NTMFS4839NHT3G
NTMFS4839NHT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 9.5A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 11.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2354pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock8,082
NTMFS4839NT1G
NTMFS4839NT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 9.5A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1588pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock3,474
NTMFS4839NT3G
NTMFS4839NT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 9.5A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1588pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock5,076
NTMFS4841NHT1G
NTMFS4841NHT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 8.6A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 11.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2113pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock5,256
NTMFS4841NHT3G
NTMFS4841NHT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 8.6A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 11.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2113pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock2,538
NTMFS4841NT1G
NTMFS4841NT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 8.3A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1436pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock231,540
NTMFS4841NT3G
NTMFS4841NT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 8.3A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1436pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock3,384
NTMFS4845NT1G
NTMFS4845NT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 13.7A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 115A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 11.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock12,234
NTMFS4845NT3G
NTMFS4845NT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 13.7A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 115A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 11.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock3,798
NTMFS4846NT1G
NTMFS4846NT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 12.7A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 11.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock8,730
NTMFS4846NT3G
NTMFS4846NT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 12.7A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 11.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock3,654
NTMFS4847NAT1G
NTMFS4847NAT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 11.5A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock4,698
NTMFS4847NAT3G
NTMFS4847NAT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 11.5A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock7,704
NTMFS4847NT1G
NTMFS4847NT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 11.5A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock8,694
NTMFS4847NT3G
NTMFS4847NT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 11.5A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock8,568
NTMFS4849NT1G
NTMFS4849NT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 10.2A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock3,618
NTMFS4849NT3G
NTMFS4849NT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 10.2A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock3,132
NTMFS4851NT1G
NTMFS4851NT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 9.5A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock2,070
NTMFS4851NT3G
NTMFS4851NT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 9.5A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock4,428
NTMFS4852NT1G
NTMFS4852NT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 16A SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 155A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71.3nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4970pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock7,956
NTMFS4852NT3G
NTMFS4852NT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 16A SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 155A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71.3nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4970pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock2,916
NTMFS4854NST1G
NTMFS4854NST1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 15.2A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: SENSEFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 149A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3.2V, 10V
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 11.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 4830pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SO-8FL
  • Package / Case: 8-PowerTDFN
In Stock8,244
NTMFS4854NST3G
NTMFS4854NST3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 15.2A SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: SENSEFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 149A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3.2V, 10V
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 11.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 4830pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SO-8FL
  • Package / Case: 8-PowerTDFN
In Stock6,120
NTMFS4897NFT1G
NTMFS4897NFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 83.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta), 96.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock24,786
NTMFS4897NFT3G
NTMFS4897NFT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 83.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta), 96.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock7,272
NTMFS4898NFT1G
NTMFS4898NFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 49.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3233pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 930mW (Ta), 73.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock3,726
NTMFS4898NFT3G
NTMFS4898NFT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 49.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3233pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 930mW (Ta), 73.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock4,608
NTMFS4899NFT1G
NTMFS4899NFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V SO-8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 920mW (Ta), 48W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock6,174
NTMFS4921NT1G
NTMFS4921NT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 8.8A SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 38.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock5,004
NTMFS4921NT3G
NTMFS4921NT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 8.8A SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 38.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock3,834