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NTMFS4899NFT1G

NTMFS4899NFT1G

For Reference Only

Part Number NTMFS4899NFT1G
PNEDA Part # NTMFS4899NFT1G
Description MOSFET N-CH 30V SO-8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,174
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMFS4899NFT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMFS4899NFT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMFS4899NFT1G, NTMFS4899NFT1G Datasheet (Total Pages: 8, Size: 130.45 KB)
PDFNTMFS4899NFT1G Datasheet Cover
NTMFS4899NFT1G Datasheet Page 2 NTMFS4899NFT1G Datasheet Page 3 NTMFS4899NFT1G Datasheet Page 4 NTMFS4899NFT1G Datasheet Page 5 NTMFS4899NFT1G Datasheet Page 6 NTMFS4899NFT1G Datasheet Page 7 NTMFS4899NFT1G Datasheet Page 8

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NTMFS4899NFT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10.4A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 12V
FET Feature-
Power Dissipation (Max)920mW (Ta), 48W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

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