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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
Description
In Stock
Quantity
TAN500
TAN500

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 75V 1.215GHZ 55ST

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 2500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 50A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
In Stock4,680
TAN75A
TAN75A

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 50V 1.215GHZ 55AZ

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 8.5dB
  • Power - Max: 290W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15mA, 5V
  • Current - Collector (Ic) (Max): 9A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AZ
  • Supplier Device Package: 55AZ
In Stock7,542
TCS1200
TCS1200

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.03GHZ 55TU-1

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.2dBd
  • Power - Max: 2095W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 60A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55TU-1
  • Supplier Device Package: 55TU-1
In Stock4,374
TCS800
TCS800

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.03GHZ 55SM

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 9dB
  • Power - Max: 1944W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 50A
  • Operating Temperature: 230°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55SM
  • Supplier Device Package: 55SM
In Stock5,490
TPR1000
TPR1000

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.09GHZ 55KV

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6dB
  • Power - Max: 2900W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 80A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KV
  • Supplier Device Package: 55KV
In Stock4,284
TPR1000A
TPR1000A

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS 65V 1.09GHZ 55KV

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6dB
  • Power - Max: 2900W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 80A
  • Operating Temperature: 200°C
  • Mounting Type: Chassis Mount
  • Package / Case: 55KV
  • Supplier Device Package: 55KV
In Stock5,274
TPR175
TPR175

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 1.09GHZ 55CX

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 9dB
  • Power - Max: 290W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 9A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55CX
  • Supplier Device Package: 55CX
In Stock5,292
TPR400
TPR400

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 1.09GHZ 55CX

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.27dB
  • Power - Max: 875W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V
  • Current - Collector (Ic) (Max): 30A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55CX
  • Supplier Device Package: 55CX
In Stock8,532
TPR700
TPR700

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.09GHZ 55KT

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.7dB
  • Power - Max: 2050W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 55A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KT
  • Supplier Device Package: 55KT
In Stock2,862
UMIL10
UMIL10

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 30V 400MHZ 55FT

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 100MHz ~ 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 28W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
In Stock8,226
UMIL100A
UMIL100A

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 31V 400MHZ 55JU

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 31V
  • Frequency - Transition: 225MHz ~ 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.2dB ~ 8.5dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55JU
  • Supplier Device Package: 55JU
In Stock6,678
UMIL25
UMIL25

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 33V 400MHZ 55HV

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 33V
  • Frequency - Transition: 225MHz ~ 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.9db ~ 10dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55HV
  • Supplier Device Package: 55HV
In Stock7,344
UMIL3
UMIL3

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 30V 400MHZ 55FT

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 225MHz ~ 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11.8db ~ 13dB
  • Power - Max: 11W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100A, 5V
  • Current - Collector (Ic) (Max): 700mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
In Stock4,590
UMIL3B
UMIL3B

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS 30V 400MHZ 55FT

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 225MHz ~ 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 11W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100A, 5V
  • Current - Collector (Ic) (Max): 700mA
  • Operating Temperature: 150°C
  • Mounting Type: Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
In Stock4,608
UMIL80
UMIL80

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 31V 500MHZ 55HV

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 31V
  • Frequency - Transition: 200MHz ~ 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB ~ 9.5dB
  • Power - Max: 220W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55HV
  • Supplier Device Package: 55HV
In Stock2,808
UPA800T-A
UPA800T-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 10V 8GHZ SOT363

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock6,444
UPA800T-T1

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 10V 8GHZ 6SO

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 3.2dB @ 2GHz
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-SO
In Stock2,502
UPA800T-T1-A

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 10V 8GHZ SOT363

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock4,968
UPA801T-A
UPA801T-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 4.5GHZ SOT363

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock4,302
UPA801T-T1-A

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 4.5GHZ SOT363

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock6,102
UPA802T-A
UPA802T-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 10V 7GHZ SOT363

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock3,562
UPA802T-T1-A

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 10V 7GHZ SOT363

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock5,814
UPA806T-A
UPA806T-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 6V 12GHZ SOT363

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 8.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock6,948
UPA806T-T1

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 6V 12GHZ 6SO

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-SO
In Stock4,842
UPA806T-T1-A

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 6V 12GHZ SOT363

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 8.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock7,560
UPA810T-A
UPA810T-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 4.5GHZ SOT363

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock2,808
UPA810T-T1

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 4.5GHZ 6SO

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2.5dB @ 1GHz
  • Gain: 7dB ~ 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-SO
In Stock6,966
UPA810T-T1-A

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 4.5GHZ SOT363

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock4,752
UPA811T-A
UPA811T-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 10V 8GHZ SOT363

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock3,384
UPA811T-T1-A

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 10V 8GHZ SOT363

  • Manufacturer: CEL
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock3,420