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UPA806T-T1-A

UPA806T-T1-A

For Reference Only

Part Number UPA806T-T1-A
PNEDA Part # UPA806T-T1-A
Description RF TRANS 2 NPN 6V 12GHZ SOT363
Manufacturer CEL
Unit Price Request a Quote
In Stock 7,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UPA806T-T1-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part NumberUPA806T-T1-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
UPA806T-T1-A, UPA806T-T1-A Datasheet (Total Pages: 6, Size: 735.98 KB)
PDFUPA806T-A Datasheet Cover
UPA806T-A Datasheet Page 2 UPA806T-A Datasheet Page 3 UPA806T-A Datasheet Page 4 UPA806T-A Datasheet Page 5 UPA806T-A Datasheet Page 6

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UPA806T-T1-A Specifications

ManufacturerCEL
Series-
Transistor Type2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)6V
Frequency - Transition12GHz
Noise Figure (dB Typ @ f)1.5dB @ 2GHz
Gain8.5dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 10mA, 3V
Current - Collector (Ic) (Max)30mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Operating Temperature

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Noise Figure (dB Typ @ f)

1.1dB ~ 1.4dB @ 900MHz

Gain

14dB ~ 16dB

Power - Max

100mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 1mA, 2.7V

Current - Collector (Ic) (Max)

8mA

Operating Temperature

150°C (TJ)

Mounting Type

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Microsemi

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Manufacturer

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NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

6GHz

Noise Figure (dB Typ @ f)

2.3dB @ 1GHz

Gain

8.3dB

Power - Max

1.8W

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 50mA, 5V

Current - Collector (Ic) (Max)

150mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

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Supplier Device Package

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