Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

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Part Number	Description	In Stock
DMPH3010LPS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 60A POWERDI5060 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6807pF @ 15V FET Feature: - Power Dissipation (Max): 2.6W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock5,094
DMPH3010LPSQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 60A POWERDI5060 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6807pF @ 15V FET Feature: - Power Dissipation (Max): 2.6W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock3,744
DMPH4013SK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V TO252 T&R Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4004pF @ 20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,608
DMPH4013SK3Q-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V TO252 T&R Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4004pF @ 20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,696
DMPH4015SK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 40V 45A TO252 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V FET Feature: - Power Dissipation (Max): 3.3W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,508
DMPH4015SK3Q-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET PCH 40V 14A TO252 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-4L Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	In Stock20,370
DMPH4015SPS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 50A POWERDI5060 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V FET Feature: - Power Dissipation (Max): 2.6W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock7,470
DMPH4015SPSQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 50A POWERDI5060 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V FET Feature: - Power Dissipation (Max): 2.6W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock8,784
DMPH4015SSS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 40V 11.4A 8SO Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V FET Feature: - Power Dissipation (Max): 1.8W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,352
DMPH4015SSSQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 40V 11.4A 8SO Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V FET Feature: - Power Dissipation (Max): 1.8W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock7,812
DMPH4023SK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V TO252 T&R Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,916
DMPH4023SK3Q-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V TO252 T&R Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,796
DMPH4025SFVWQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1918pF @ 20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock3,294
DMPH4025SFVWQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1918pF @ 20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock2,934
DMPH4029LFG-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,490
DMPH4029LFG-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,894
DMPH4029LFGQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,850
DMPH4029LFGQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,012
DMPH6023SK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 60V 35A TO252 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V FET Feature: - Power Dissipation (Max): 3.2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,472
DMPH6023SK3Q-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 60V 35A TO252 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V FET Feature: - Power Dissipation (Max): 3.2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,958
DMPH6050SFG-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V POWERDI333 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,058
DMPH6050SFG-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V POWERDI333 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock8,406
DMPH6050SFGQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFETP-CH 60VPOWERDI3333-8 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock7,974
DMPH6050SFGQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFETP-CH 60VPOWERDI3333-8 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1.293nF @ 30V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock42,930
DMPH6050SK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 7.2A DPAK Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 30V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock20,538
DMPH6050SK3Q-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 7.2A TO252 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 30V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,550
DMPH6250SQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 61V-100V SOT23 T&R Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 30V FET Feature: - Power Dissipation (Max): 920mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,718
DMPH6250SQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 61V-100V SOT23 T&R Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 30V FET Feature: - Power Dissipation (Max): 920mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,688
DMS2085LSD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.3A Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,916
DMS2120LFWB-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.9A 8DFN Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN3020B (3x2) Package / Case: 8-VDFN Exposed Pad	In Stock3,508

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