Transistors

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Records 64,903

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Part Number	Description	In Stock
DMP4025LSSQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET PCH 40V 6A 8SO Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V FET Feature: - Power Dissipation (Max): 1.52W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,430
DMP4025SFG-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 4.65A POWERDI Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1643pF @ 20V FET Feature: - Power Dissipation (Max): 810mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock121,944
DMP4025SFG-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 4.65A POWERDI Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1643pF @ 20V FET Feature: - Power Dissipation (Max): 810mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock3,562
DMP4025SFGQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 7.2A POWERDI3333 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1643pF @ 20V FET Feature: - Power Dissipation (Max): 810mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock116,952
DMP4025SFGQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V POWERDI3333-8 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1643pF @ 20V FET Feature: - Power Dissipation (Max): 810mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock31,002
DMP4047LFDE-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 3.3A U-DFN2020 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 33mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1382pF @ 20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	In Stock3,546
DMP4047SK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 20A TO252 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1328pF @ 20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock21,648
DMP4050SSS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 4.4A 8SO Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock137,994
DMP4051LK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 7.2A DPAK Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V FET Feature: - Power Dissipation (Max): 2.14W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock248,640
DMP4065S-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 3.4A SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 20V FET Feature: - Power Dissipation (Max): 720mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock8,244
DMP4065S-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 2.4A SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 20V FET Feature: - Power Dissipation (Max): 720mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock1,433,496
DMP4065SQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V 40V SOT23 T&R Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 20V FET Feature: - Power Dissipation (Max): 720mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,232
DMP4065SQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V 40V SOT23 T&R Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 20V FET Feature: - Power Dissipation (Max): 720mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock71,082
DMP45H150DHE-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFETP-CHAN 450VSOT223 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 250mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 59.2pF @ 25V FET Feature: - Power Dissipation (Max): 13.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock6,354
DMP45H21DHE-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFETP-CHAN 450V SOT223 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 25V FET Feature: - Power Dissipation (Max): 12.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock7,650
DMP45H4D9HJ3 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 450V 4.6A TO251 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 25V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3, IPak, Short Leads	In Stock4,842
DMP45H4D9HK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 450V 4.7A TO252 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 25V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,282
DMP510DL-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 0.18A SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 24.6pF @ 25V FET Feature: - Power Dissipation (Max): 310mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,628
DMP510DL-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 0.18A SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 24.6pF @ 25V FET Feature: - Power Dissipation (Max): 310mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock624,138
DMP56D0UFB-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 200MA 3DFN Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 50.54pF @ 25V FET Feature: - Power Dissipation (Max): 425mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006 (1.0x0.6) Package / Case: 3-UFDFN	In Stock3,996
DMP56D0UFB-7B Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 200MA 3DFN Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 50.54pF @ 25V FET Feature: - Power Dissipation (Max): 425mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006 (1.0x0.6) Package / Case: 3-UFDFN	In Stock7,830
DMP57D5UFB-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 200MA 3-DFN Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 29pF @ 4V FET Feature: - Power Dissipation (Max): 425mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006 (1.0x0.6) Package / Case: 3-UFDFN	In Stock8,640
DMP58D0LFB-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 0.18A DFN1006-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V FET Feature: - Power Dissipation (Max): 470mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006 (1.0x0.6) Package / Case: 3-UFDFN	In Stock73,572
DMP58D0LFB-7B Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 180MA 3-DFN Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V FET Feature: - Power Dissipation (Max): 470mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-X1DFN1006 Package / Case: 3-UFDFN	In Stock7,002
DMP6023LE-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 7A SOT223 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock8,154
DMP6023LEQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V SOT223 T&R Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 17.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock8,262
DMP6023LFG-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 7.7A POWERDI3333 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock5,778
DMP6023LFG-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 7.7A POWERDI3333 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock1,039
DMP6023LFGQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET PCH 60V 7.7A POWERDI Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock4,698
DMP6023LFGQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET PCH 60V 7.7A POWERDI Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock2,610

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