Transistors

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Records 64,903

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Part Number	Description	In Stock
DMN3042L-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.8A SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 15V FET Feature: - Power Dissipation (Max): 720mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock353,202
DMN3042LFDF-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7A UDFN2020-6 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 50V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	In Stock7,866
DMN3042LFDF-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7A UDFN2020-6 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	In Stock6,066
DMN3050S-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.2A SOT-23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 15V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,366
DMN3051L-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.8A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 5V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock134,898
DMN3051LDM-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4A SOT26 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 5V FET Feature: - Power Dissipation (Max): 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	In Stock6,516
DMN3052L-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.4A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2V, 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 5V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,912
DMN3052LSS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.1A 8-SOIC Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 5V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,268
DMN3053L-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 676pF @ 15V FET Feature: - Power Dissipation (Max): 760mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,454
DMN3053L-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 676pF @ 15V FET Feature: - Power Dissipation (Max): 760mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock99,468
DMN3060LCA3-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V X4-DSN1006 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,052
DMN3065LW-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4A SOT323 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V FET Feature: - Power Dissipation (Max): 770mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	In Stock3,888
DMN3065LW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4A SOT-323 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V FET Feature: - Power Dissipation (Max): 770mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	In Stock1,550,598
DMN3067LW-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 2.6A SOT-323 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 447pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	In Stock7,794
DMN3067LW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 2.6A SOT-323 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 447pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	In Stock19,750
DMN3070SSN-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4.2A SC59 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V FET Feature: - Power Dissipation (Max): 780mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-59 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,968
DMN3071LFR4-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V X2-DFN1010 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,996
DMN3071LFR4-7R Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V X2-DFN1010 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock4,086
DMN30H14DLY-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V .21A SOT-89 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 96pF @ 25V FET Feature: - Power Dissipation (Max): 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	In Stock1,776
DMN30H4D0L-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V .25A SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 187.3pF @ 25V FET Feature: - Power Dissipation (Max): 310mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,508
DMN30H4D0L-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V .25A SOT-23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 187.3pF @ 25V FET Feature: - Power Dissipation (Max): 310mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock23,970
DMN30H4D0LFDE-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 0.55A 6UDFN Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 187.3pF @ 25V FET Feature: - Power Dissipation (Max): 630mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	In Stock7,398
DMN30H4D0LFDE-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V .55A 6UDFN Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 187.3pF @ 25V FET Feature: - Power Dissipation (Max): 630mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	In Stock307,758
DMN30H4D1S-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 251V-500V SOT23 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,718
DMN30H4D1S-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 251V-500V SOT23 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock8,172
DMN3110LCP3-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 3.2A X2DFN1006-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Rds On (Max) @ Id, Vgs: 69mOhm @ 500mA, 8V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.52nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V FET Feature: - Power Dissipation (Max): 1.38W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN1006-3 Package / Case: 3-XFDFN	In Stock5,400
DMN3110S-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 2.5A SOT-23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 305.8pF @ 15V FET Feature: - Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock29,448
DMN3112S-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.8A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 57mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 5V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,668
DMN3112SSS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6A 8SOP Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 57mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,772
DMN3115UDM-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 3.2A SOT-26 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 476pF @ 15V FET Feature: - Power Dissipation (Max): 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	In Stock25,938

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