Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 1089/2164

Part Number	Description	In Stock
BUK98150-55,135 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 5.5A SOT-223 Manufacturer: NXP USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V FET Feature: - Power Dissipation (Max): 8.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock3,582
BUK98150-55A,135 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 5.5A SOT-223 Manufacturer: NXP USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 137mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V FET Feature: - Power Dissipation (Max): 8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock6,678
BUK98150-55A/CUF Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 5.5A SOT223 Manufacturer: Nexperia USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 137mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V FET Feature: - Power Dissipation (Max): 8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-73 Package / Case: TO-261-4, TO-261AA	In Stock623,382
BUK98150-55/CUF Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 5.5A SOT223 Manufacturer: Nexperia USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V FET Feature: - Power Dissipation (Max): 8.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-73 Package / Case: TO-261-4, TO-261AA	In Stock5,130
BUK98180-100A,115 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4.6A SOT-223 Manufacturer: NXP USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V FET Feature: - Power Dissipation (Max): 8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock4,014
BUK98180-100A/CUX Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4.6A SOT223 Manufacturer: Nexperia USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V FET Feature: - Power Dissipation (Max): 8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-73 Package / Case: TO-261-4, TO-261AA	In Stock556,098
BUK9832-55A,115 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 12A SOT223 Manufacturer: NXP USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1594pF @ 25V FET Feature: - Power Dissipation (Max): 8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock8,100
BUK9832-55A/CUX Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 12A SOT223 Manufacturer: Nexperia USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1594pF @ 25V FET Feature: - Power Dissipation (Max): 8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-73 Package / Case: TO-261-4, TO-261AA	In Stock759,276
BUK9840-55,115 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 5A SOT223 Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-73 Package / Case: TO-261-4, TO-261AA	In Stock2,520
BUK9840-55/CUX Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 5A SOT223 Manufacturer: Nexperia USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V FET Feature: - Power Dissipation (Max): 8.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-73 Package / Case: TO-261-4, TO-261AA	In Stock5,544
BUK9875-100A,115 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 7A SOT-223 Manufacturer: NXP USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 72mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V FET Feature: - Power Dissipation (Max): 8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock2,340
BUK9875-100A/CUX Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 7A SOT223 Manufacturer: Nexperia USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 72mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V FET Feature: - Power Dissipation (Max): 8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-73 Package / Case: TO-261-4, TO-261AA	In Stock265,524
BUK9880-55,135 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 7.5A SOT223 Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V FET Feature: - Power Dissipation (Max): 8.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-73 Package / Case: TO-261-4, TO-261AA	In Stock5,364
BUK9880-55A,115 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 7A SOT223 Manufacturer: NXP USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V FET Feature: - Power Dissipation (Max): 8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock2,682
BUK9880-55A/CUX Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 7A SOT223 Manufacturer: Nexperia USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V FET Feature: - Power Dissipation (Max): 8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-73 Package / Case: TO-261-4, TO-261AA	In Stock1,060,482
BUK9880-55/CUF Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 7.5A SOT223 Manufacturer: Nexperia USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V FET Feature: - Power Dissipation (Max): 8.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-73 Package / Case: TO-261-4, TO-261AA	In Stock4,896
BUK9907-40ATC,127 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220AB Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 5836pF @ 25V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 272W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	In Stock6,408
BUK9907-55ATE,127 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO220AB Manufacturer: NXP USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 108nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 5836pF @ 25V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 272W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	In Stock4,806
BUK9C10-55BIT/A,11 Nexperia	Transistors - FETs, MOSFETs - Single 55V N CH TRENCHFET Manufacturer: Nexperia USA Inc. Series: TrenchPLUS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 4667pF @ 25V FET Feature: - Power Dissipation (Max): 194W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock6,894
BUK9C10-65BIT,118 Nexperia	Transistors - FETs, MOSFETs - Single 9605 AUTO TRENCH PLUS Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.3mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 59.6nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 4170pF @ 25V FET Feature: - Power Dissipation (Max): 171W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock3,690
BUK9C1R3-40EJ NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V D2PAK Manufacturer: NXP USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 1.3mOhm @ 90A, 5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB	In Stock2,412
BUK9C2R2-60EJ NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V D2PAK Manufacturer: NXP USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB	In Stock3,402
BUK9C3R8-80EJ NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V D2PAK Manufacturer: NXP USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB	In Stock8,136
BUK9C5R3-100EJ NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V D2PAK Manufacturer: NXP USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB	In Stock3,114
BUK9D23-40EX Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 8A 6DFN2020MD Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 20V FET Feature: - Power Dissipation (Max): 15W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	In Stock27,516
BUK9E04-30B,127 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A I2PAK Manufacturer: NXP USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 6526pF @ 25V FET Feature: - Power Dissipation (Max): 254W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock6,732
BUK9E04-40A,127 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A I2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 8260pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock6,012
BUK9E06-55A,127 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A I2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock8,874
BUK9E06-55B,127 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A I2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 7565pF @ 25V FET Feature: - Power Dissipation (Max): 258W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock8,442
BUK9E08-55B,127 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A I2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 5280pF @ 25V FET Feature: - Power Dissipation (Max): 203W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock21,090

«
‹
1
...
1086
1087
1088
1089 (current)
1090
1091
1092
...
2164
›
»

Send Message

Certifications

Transistors

Resources

Support

Social Media

Need Help?
Send Message