Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BUK98150-55,135

BUK98150-55,135

For Reference Only

Part Number BUK98150-55,135
PNEDA Part # BUK98150-55-135
Description MOSFET N-CH 55V 5.5A SOT-223
Manufacturer NXP
Unit Price Request a Quote
In Stock 3,582
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK98150-55 Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberBUK98150-55,135
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK98150-55, BUK98150-55 Datasheet (Total Pages: 12, Size: 339.51 KB)
PDFBUK98150-55/CUF Datasheet Cover
BUK98150-55/CUF Datasheet Page 2 BUK98150-55/CUF Datasheet Page 3 BUK98150-55/CUF Datasheet Page 4 BUK98150-55/CUF Datasheet Page 5 BUK98150-55/CUF Datasheet Page 6 BUK98150-55/CUF Datasheet Page 7 BUK98150-55/CUF Datasheet Page 8 BUK98150-55/CUF Datasheet Page 9 BUK98150-55/CUF Datasheet Page 10 BUK98150-55/CUF Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BUK98150-55,135 Datasheet
  • where to find BUK98150-55,135
  • NXP

  • NXP BUK98150-55,135
  • BUK98150-55,135 PDF Datasheet
  • BUK98150-55,135 Stock

  • BUK98150-55,135 Pinout
  • Datasheet BUK98150-55,135
  • BUK98150-55,135 Supplier

  • NXP Distributor
  • BUK98150-55,135 Price
  • BUK98150-55,135 Distributor

BUK98150-55 Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs150mOhm @ 5A, 5V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 25V
FET Feature-
Power Dissipation (Max)8.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

The Products You May Be Interested In

IRFZ44VZSPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

57A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1690pF @ 25V

FET Feature

-

Power Dissipation (Max)

92W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

CSD16327Q3T

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

3V, 8V

Rds On (Max) @ Id, Vgs

4mOhm @ 24A, 8V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.4nC @ 4.5V

Vgs (Max)

+10V, -8V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 12.5V

FET Feature

-

Power Dissipation (Max)

74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSON-CLIP (3.3x3.3)

Package / Case

8-PowerTDFN

STW9NK70Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 25V

FET Feature

-

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

FQB8N60CFTM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FRFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 3.13A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1255pF @ 25V

FET Feature

-

Power Dissipation (Max)

147W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFBC30STRLPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.2Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

660pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

CRA2512-FZ-R020ELF

CRA2512-FZ-R020ELF

Bourns

RES 0.02 OHM 1% 3W 2512

XC7Z030-1FBG676I

XC7Z030-1FBG676I

Xilinx

IC SOC CORTEX-A9 667MHZ 676FCBGA

CDSU4148

CDSU4148

Comchip Technology

DIODE GEN PURP 75V 150MA 0603

ADR421ARMZ-REEL7

ADR421ARMZ-REEL7

Analog Devices

IC VREF SERIES 2.5V 8MSOP

1N4148WS

1N4148WS

ON Semiconductor

DIODE GEN PURP 75V 150MA SOD323F

MT40A256M16GE-083E IT:B

MT40A256M16GE-083E IT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

SMBJ36CA-13-F

SMBJ36CA-13-F

Diodes Incorporated

TVS DIODE 36V 58.1V SMB

WSL0805R0500FEA

WSL0805R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/8W 0805

MAX202EEUE

MAX202EEUE

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16TSSOP

IS42S16160G-7BLI-TR

IS42S16160G-7BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

EPC2045ENGRT

EPC2045ENGRT

EPC

GANFET TRANS 100V BUMPED DIE

MP2144GJ-Z

MP2144GJ-Z

Monolithic Power Systems Inc.

IC REG BUCK ADJ 2A TSOT23-8