Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
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Records 64,903

Page 1021/2164

Part Number	Description	In Stock
APT35SM70S Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V D3PAK Manufacturer: Microsemi Corporation Series: - FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 35A Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,766
APT36N90BC3G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 36A TO-247 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3.5V @ 2.9mA Gate Charge (Qg) (Max) @ Vgs: 252nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7463pF @ 25V FET Feature: Super Junction Power Dissipation (Max): 390W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	In Stock3,834
APT37F50B Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 37A TO-247 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5710pF @ 25V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	In Stock5,976
APT37F50S Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 37A D3PAK Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5710pF @ 25V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock8,802
APT37M100B2 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 37A T-MAX Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V FET Feature: - Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	In Stock452
APT37M100L Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 37A TO-264 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V FET Feature: - Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	In Stock6,948
APT38F50J Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 38A SOT-227 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V FET Feature: - Power Dissipation (Max): 355W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock6,048
APT38F80B2 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 41A T-MAX Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8070pF @ 25V FET Feature: - Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	In Stock2,124
APT38F80L Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 41A TO-264 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8070pF @ 25V FET Feature: - Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	In Stock8,514
APT38M50J Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 38A ISOTOP Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock4,158
APT38N60BC6 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 38A TO-247 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 25V FET Feature: - Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	In Stock7,812
APT38N60SC6 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 38A D3PAK Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 25V FET Feature: - Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,376
APT39F60J Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 42A SOT-227 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V FET Feature: - Power Dissipation (Max): 480W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock6,156
APT39M60J Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 42A SOT-227 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V FET Feature: - Power Dissipation (Max): 480W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock7,416
APT4012BVR Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 37A TO247AD Manufacturer: Microsemi Corporation Series: POWER MOS V® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V FET Feature: - Power Dissipation (Max): 370W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	In Stock2,952
APT4012BVRG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 37A TO247AD Manufacturer: Microsemi Corporation Series: POWER MOS V® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V FET Feature: - Power Dissipation (Max): 370W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	In Stock8,442
APT4016BVRG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V TO-247 Manufacturer: Microsemi Corporation Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,336
APT4065BNG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 11A TO247AD Manufacturer: Microsemi Corporation Series: POWER MOS IV® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	In Stock6,516
APT40M35JVFR Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 93A SOT-227 Manufacturer: Microsemi Corporation Series: POWER MOS V® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 46.5A, 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 1065nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 20160pF @ 25V FET Feature: - Power Dissipation (Max): 700W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock2,628
APT40M42JN Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 86A ISOTOP Manufacturer: Microsemi Corporation Series: POWER MOS IV® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 43A, 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 760nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V FET Feature: - Power Dissipation (Max): 690W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock3,384
APT40M70JVFR Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 53A SOT-227 Manufacturer: Microsemi Corporation Series: POWER MOS V® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 495nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8890pF @ 25V FET Feature: - Power Dissipation (Max): 450W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock2,808
APT40M70LVFRG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 57A TO-264 Manufacturer: Microsemi Corporation Series: POWER MOS V® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 495nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8890pF @ 25V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	In Stock8,352
APT40M75JN Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 56A ISOTOP Manufacturer: Microsemi Corporation Series: POWER MOS IV® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 370nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock5,346
APT40N60JCU2 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 40A SOT-227 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V FET Feature: - Power Dissipation (Max): 290W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock5,796
APT40N60JCU3 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 40A SOT-227 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V FET Feature: - Power Dissipation (Max): 290W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock6,750
APT40SM120B Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 41A TO247 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V FET Feature: - Power Dissipation (Max): 273W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock8,712
APT40SM120J Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 32A SOT227 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V FET Feature: - Power Dissipation (Max): 165W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock8,874
APT40SM120S Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 41A D3PAK Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V FET Feature: - Power Dissipation (Max): 273W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock8,136
APT41F100J Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 41A SOT-227 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock6,084
APT41M80B2 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 43A T-MAX Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8070pF @ 25V FET Feature: - Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	In Stock5,652

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