Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1020/2164

Part Number	Description	In Stock
APT30M40JVR Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 70A SOT-227 Manufacturer: Microsemi Corporation Series: POWER MOS V® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V FET Feature: - Power Dissipation (Max): 450W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock4,644
APT30M60J Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 31A SOT-227 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V FET Feature: - Power Dissipation (Max): 355W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock2,664
APT30M70BVFRG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 48A TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS V® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V FET Feature: - Power Dissipation (Max): 370W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	In Stock5,328
APT30M70BVRG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 48A TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS V® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V FET Feature: - Power Dissipation (Max): 370W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	In Stock8,694
APT30M70SVRG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 48A D3PAK Manufacturer: Microsemi Corporation Series: POWER MOS V® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V FET Feature: - Power Dissipation (Max): 370W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3 [S] Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock4,194
APT30M85BVFRG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 40A TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS V® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	In Stock4,194
APT30M85BVRG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 40A TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS V® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	In Stock3,816
APT30M85SVFRG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 40A D3PAK Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3 [S] Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock7,992
APT30N60BC6 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO-247 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2267pF @ 25V FET Feature: - Power Dissipation (Max): 219W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	In Stock7,758
APT30N60KC6 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO-220 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 2267pF @ 25V FET Feature: - Power Dissipation (Max): 219W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 [K] Package / Case: TO-220-3	In Stock8,280
APT30N60SC6 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A D3PAK Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2267pF @ 25V FET Feature: - Power Dissipation (Max): 219W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,982
APT31M100B2 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 32A T-MAX Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V FET Feature: - Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	In Stock8,820
APT31M100L Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 32A TO264 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V FET Feature: - Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	In Stock6,336
APT31N60BCSG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 31A TO-247 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3055pF @ 25V FET Feature: - Power Dissipation (Max): 255W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock4,068
APT31N80JC3 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 31A SOT-227 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 355nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 25V FET Feature: - Power Dissipation (Max): 833W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock8,082
APT32F120J Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 33A SOT-227 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 320mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 18200pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock3,726
APT32M80J Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 33A SOT-227 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 303nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9326pF @ 25V FET Feature: - Power Dissipation (Max): 543W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock3,492
APT33N90JCCU2 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 33A SOT227 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 290W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock7,254
APT33N90JCCU3 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 33A SOT227 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 290W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock2,592
APT33N90JCU2 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 33A SOT227 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 290W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock6,552
APT33N90JCU3 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 33A SOT227 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 290W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock8,154
APT34F100B2 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 35A T-MAX Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V FET Feature: - Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	In Stock5,976
APT34F100L Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 35A TO264 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V FET Feature: - Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	In Stock5,094
APT34F60B Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 34A TO-247 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V FET Feature: - Power Dissipation (Max): 624W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	In Stock6,678
APT34F60BG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 34A TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V FET Feature: - Power Dissipation (Max): 624W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock3,114
APT34M120J Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 34A SOT-227 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 18200pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock3,816
APT34M60B Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 36A TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V FET Feature: - Power Dissipation (Max): 624W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	In Stock6,552
APT34N80B2C3G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 34A T-MAX Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 355nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 25V FET Feature: - Power Dissipation (Max): 417W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	In Stock5,886
APT34N80LC3G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 34A TO-264 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 355nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 25V FET Feature: - Power Dissipation (Max): 417W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	In Stock3,636
APT35SM70B Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V TO247 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 20V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 700V FET Feature: - Power Dissipation (Max): 176W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock6,390

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