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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

Records 34,936

Page 941/1165

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CD1005-S01575	Bourns	DIODE GEN PURP 75V 150MA 1005	5,778	-	Standard	75V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 75V	4pF @ 1V, 100MHz	Surface Mount	1005 (2512 Metric)	1005	-40°C ~ 125°C
CD1005-S0180R	Bourns	DIODE GEN PURP 80V 100MA 1005	3,222	-	Standard	80V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 80V	4pF @ 1V, 100MHz	Surface Mount	1005 (2512 Metric)	1005	-40°C ~ 125°C
CD0603-S0180R	Bourns	DIODE GEN PURP 80V 100MA 0603	6,066	-	Standard	80V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 75V	4pF @ 1V, 100MHz	Surface Mount	0603 (1608 Metric)	0603	-40°C ~ 125°C
CD0603-S0180	Bourns	DIODE GEN PURP 80V 100MA 0603	4,896	-	Standard	80V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 80V	4pF @ 1V, 100MHz	Surface Mount	0603 (1608 Metric)	0603	-40°C ~ 125°C
CD1005-B00340	Bourns	DIODE SCHOTTKY 40V 30MA 1005	4,842	-	Schottky	40V	30mA	370mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 40V	1.5pF @ 1V, 1MHz	Surface Mount	1005 (2512 Metric)	1005	-40°C ~ 125°C
DLE30C	ON Semiconductor	DIODE GEN PURP 200V 3A AXIAL	7,938	-	Standard	200V	3A	980mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Through Hole	DO-201AD, Axial	Axial	150°C (Max)
DLE30C-KC9	ON Semiconductor	DIODE GEN PURP 200V 3A AXIAL	5,184	-	Standard	200V	3A	980mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Through Hole	DO-201AD, Axial	Axial	150°C (Max)
DLE30E	ON Semiconductor	DIODE GEN PURP 400V 3A AXIAL	3,834	-	Standard	400V	3A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	20µA @ 400V	-	Through Hole	DO-201AD, Axial	Axial	150°C (Max)
DLM10C	ON Semiconductor	DIODE GEN PURP 200V 1A DO204AL	4,914	-	Standard	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DLM10C-AT1	ON Semiconductor	DIODE GEN PURP 200V 1A DO204AL	7,758	-	Standard	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DLM10E	ON Semiconductor	DIODE GEN PURP 400V 1A DO204AL	5,886	-	Standard	400V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DS135AC	ON Semiconductor	DIODE GEN PURP 400V 1A DO204AL	3,996	-	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DS135AD	ON Semiconductor	DIODE GEN PURP 200V 1A DO204AL	2,484	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DS135AE	ON Semiconductor	DIODE GEN PURP 100V 1A DO204AL	3,906	-	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DSA17G	ON Semiconductor	DIODE GEN PURP 600V 1.7A AXIAL	5,850	-	Standard	600V	1.7A	1.05V @ 1.7A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Through Hole	Axial	-	150°C (Max)
DSA26G	ON Semiconductor	DIODE GEN PURP 600V 2.6A AXIAL	8,118	-	Standard	600V	2.6A	1.05V @ 2.6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Through Hole	Axial	-	150°C (Max)
DSF10TB	ON Semiconductor	DIODE GEN PURP 100V 1A DO204AL	5,688	-	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DSF10TC	ON Semiconductor	DIODE GEN PURP 200V 1A DO204AL	6,282	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DSK10B	ON Semiconductor	DIODE GEN PURP 100V 1A AXIAL	8,892	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	Axial	-	150°C (Max)
DSK10C	ON Semiconductor	DIODE GEN PURP 200V 1A AXIAL	8,136	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	R-1, Axial	-	150°C (Max)
DSK10E	ON Semiconductor	DIODE GEN PURP 400V 1A AXIAL	5,472	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	R-1, Axial	-	150°C (Max)
RD0106T-H	ON Semiconductor	DIODE GEN PURP 600V 1A TP	3,276	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TP	150°C (Max)
RD0504T-H	ON Semiconductor	DIODE GEN PURP 400V 5A TP	3,042	-	Standard	400V	5A	1.5V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 400V	-	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TP	150°C (Max)
RD0506T-H	ON Semiconductor	DIODE GEN PURP 600V 5A TP	8,748	-	Standard	600V	5A	1.6V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 600V	-	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TP	150°C (Max)
SB10-03A2	ON Semiconductor	DIODE SCHOTTKY 30V 1A DO41	7,992	-	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	150°C (Max)
SB10-03A3	ON Semiconductor	DIODE SCHOTTKY 30V 1A DO41	6,750	-	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB10-05A2	ON Semiconductor	DIODE SCHOTTKY 50V 1A DO41	4,284	-	Schottky	50V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB10-05A3	ON Semiconductor	DIODE SCHOTTKY 50V 1A DO41	7,722	-	Schottky	50V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
UD0506T-H	ON Semiconductor	DIODE GEN PURP 600V 5A TP	3,492	-	Standard	600V	5A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 600V	-	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TP	150°C (Max)
DLA11C-TR-E	ON Semiconductor	DIODE GEN PURP 200V 1.1A 2SMD	5,580	-	Standard	200V	1.1A	980mV @ 1.1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	-	Surface Mount	2-SMD, J-Lead	SMD	150°C (Max)

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