DLA11C-TR-E
For Reference Only
| Part Number | DLA11C-TR-E |
| PNEDA Part # | DLA11C-TR-E |
| Description | DIODE GEN PURP 200V 1.1A 2SMD |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,580 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DLA11C-TR-E Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | DLA11C-TR-E |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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DLA11C-TR-E Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 1.1A |
| Voltage - Forward (Vf) (Max) @ If | 980mV @ 1.1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 10µA @ 200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | 2-SMD, J-Lead |
| Supplier Device Package | SMD |
| Operating Temperature - Junction | 150°C (Max) |
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Manufacturer Infineon Technologies Series - Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
