Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 88/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 34A TO220-2 |
307 |
|
- | Silicon Carbide Schottky | 650V | 34A (DC) | 1.35V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 53µA @ 420V | 783pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 10A TO220-2 |
7,428 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 62µA @ 1200V | 525pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
7,488 |
|
- | Standard | 600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | 25pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTKY 650V 16A TO220-2-1 |
23,940 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 12A TO-220-2 |
1,165 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 12A (DC) | 1.55V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | 438pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 20A DO247 |
5,180 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 650V | 20A | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 650V | 1250pF @ 0V, 1MHz | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 70A DO203AB |
283 |
|
- | Standard | 400V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GP 200V 150A POWIRTAB |
8,148 |
|
FRED Pt® | Standard | 200V | 150A | 1.13V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 50µA @ 200V | - | Through Hole | PowerTab™, PowIRtab™ | PowIRtab™ | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A TO247AC |
22,956 |
|
HEXFRED® | Standard | 600V | 25A | 1.7V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 20µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
22,062 |
|
FRED Pt® | Standard | 600V | 60A | 1.68V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 81ns | 50µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 1.2KV 15A TO220AC |
6,056 |
|
- | Silicon Carbide Schottky | 1200V | 15A | 1.5V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 1200V | 1200pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A TO247AC |
1,299 |
|
HEXFRED® | Standard | 1200V | 16A | 3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 20µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 1.6KV 63A TO247AD |
15 |
|
- | Standard | 1600V | 63A | 4.1V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 2mA @ 1600V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 650V 39A TO220-2 |
14,544 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 39A (DC) | 1.8V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 95µA @ 650V | 878pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 20A TO220AC |
16,716 |
|
- | Silicon Carbide Schottky | 650V | 20A (DC) | 1.55V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 730pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Microsemi |
DIODE SCHOTTKY 45V 1A DO213AB |
6,552 |
|
- | Schottky | 45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | -65°C ~ 125°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 1.2KV 10A TO220AC |
27,654 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.6V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 550pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A AXIAL |
176 |
|
- | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 85A DO203AB |
6,864 |
|
- | Standard | 200V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 15V 150MA DO35 |
17,448 |
|
- | Standard | 15V | 150mA (DC) | 1.1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 15pA @ 15V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
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|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 20A TO-220-2 |
9,908 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 20A (DC) | 1.55V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 730pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Cree/Wolfspeed |
5A, 1700V, G5 ZREC SIC SCHOTTKY |
9,336 |
|
Z-Rec® | Silicon Carbide Schottky | 1700V | 18A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1700V | 425pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 85A DO203AB |
7,176 |
|
- | Standard | 400V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 1A D5A |
6,210 |
|
- | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1.2KV 56A TO220-2 |
14,610 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 56A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 123µA @ 1200V | 1050pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 40A DO5 |
116 |
|
- | Standard | 600V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
Microsemi |
DIODE GEN PURP 4A B-MELF |
6,564 |
|
- | Standard | - | 4A (DC) | 1V @ 200mA | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 70A DO203AB |
46 |
|
- | Standard | 800V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 20A TO247 |
15,648 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 650V | 20A | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 650V | 1250pF @ 0V, 1MHz | Through Hole | TO-247-3 | TO-247 | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 30A TO247-3 |
63 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 220µA @ 650V | 860pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |