IDH10G120C5XKSA1
For Reference Only
| Part Number | IDH10G120C5XKSA1 |
| PNEDA Part # | IDH10G120C5XKSA1 |
| Description | DIODE SCHOTTKY 1200V 10A TO220-2 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,428 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IDH10G120C5XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IDH10G120C5XKSA1 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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IDH10G120C5XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolSiC™+ |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 62µA @ 1200V |
| Capacitance @ Vr, F | 525pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | PG-TO220-2-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Taiwan Semiconductor Corporation Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 800mA Voltage - Forward (Vf) (Max) @ If 1.3V @ 800mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 150ns Current - Reverse Leakage @ Vr 5µA @ 100V Capacitance @ Vr, F 10pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package Sub SMA Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101 Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 5.5A Voltage - Forward (Vf) (Max) @ If 510mV @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 40V Capacitance @ Vr, F 405pF @ 5V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package D-PAK (TO-252AA) Operating Temperature - Junction -40°C ~ 150°C |
