Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 815/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
4,572 |
|
- | Standard | 200V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 170°C |
|
|
ON Semiconductor |
DIODE GEN PURP 400V 3A DO201AD |
8,802 |
|
- | Standard | 400V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 170°C |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD |
6,516 |
|
- | Standard | 600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 170°C |
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 3A DO201AD |
4,518 |
|
- | Standard | 1000V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 170°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 20V 1A AXIAL |
3,672 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 125°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 1A AXIAL |
3,400 |
|
- | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 125°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 40V 1A AXIAL |
5,958 |
|
- | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 125°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 20V 3A DO201AD |
6,390 |
|
- | Schottky | 20V | 3A | 475mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 3A DO201AD |
2,682 |
|
- | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 30V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 40V 3A DO201AD |
3,562 |
|
- | Schottky | 40V | 3A | 525mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
|
|
ON Semiconductor |
DIODE GEN PURP 40V 100MA SC70-3 |
6,282 |
|
- | Standard | 40V | 100mA (DC) | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3ns | 100nA @ 35V | 2pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) | 150°C (Max) |
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 30MA SOD323 |
5,346 |
|
- | Schottky | 30V | 30mA (DC) | 370mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 30V | 2.5pF @ 1V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO220-2 |
2,484 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 150pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2 |
3,436 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
Infineon Technologies |
DIODE SCHOTTKY 300V 10A TO220-2 |
3,402 |
|
CoolSiC™+ | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 12A TO220-2 |
8,028 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 450pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A FLIPKY |
6,246 |
|
- | Schottky | 40V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80µA @ 40V | - | Surface Mount | Flipky™ | Flipky™ | -55°C ~ 150°C |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 20A DOP3I |
5,130 |
|
TURBOSWITCH™ | Standard | 600V | 20A | 1.75V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 600V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 150°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
8,190 |
|
TURBOSWITCH™ | Standard | 600V | 8A | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 52ns | 100µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 150°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 1KV 30A DOP3I |
4,806 |
|
- | Standard | 1000V | 30A | 1.9V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 165ns | 100µA @ 1000V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | -40°C ~ 150°C |
|
|
STMicroelectronics |
DIODE GEN PURP 1KV 12A TO220AC |
7,020 |
|
- | Standard | 1000V | 12A | 1.9V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 155ns | 50µA @ 1000V | - | Through Hole | TO-220-2 Isolated Tab | TO220AC Isolated | -40°C ~ 150°C |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 20A SOD93-2 |
5,058 |
|
TURBOSWITCH™ | Standard | 600V | 20A | 1.75V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 600V | - | Through Hole | SOD-93-2 | SOD-93-2 | 150°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 12A TO220AC |
5,940 |
|
TURBOSWITCH™ | Standard | 600V | 12A | 1.75V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
STMicroelectronics |
DIODE GP 1.2KV 5A ISOWATT-220AC |
2,106 |
|
TURBOSWITCH™ | Standard | 1200V | 5A | 2.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 1200V | - | Through Hole | ISOWATT220AC-3 | ISOWATT-220AC | 150°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 200V 10A TO220AC |
4,302 |
|
- | Standard | 200V | 10A | 1.15V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
3,132 |
|
TURBOSWITCH™ | Standard | 600V | 8A | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 52ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 200V 8A TO220AC |
4,554 |
|
- | Standard | 200V | 8A | 1.25V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 50µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 1A DO41 |
2,610 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 1µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 175°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 400V 1A DO15 |
7,434 |
|
- | Standard | 400V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 20µA @ 400V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -40°C ~ 150°C |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 1A SMB |
5,814 |
|
TURBOSWITCH™ | Standard | 600V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Surface Mount | DO-214AA, SMB | SMB | 125°C (Max) |