Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 812/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
DIODE SCHOTTKY 50V 5A DO201AD |
3,510 |
|
- | Schottky | 50V | 5A | 670mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 60V 5A DO201AD |
5,814 |
|
- | Schottky | 60V | 5A | 670mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 30A TO247 |
5,706 |
|
- | Standard | 1000V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247-2 | - |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1.2KV 30A TO247 |
5,760 |
|
- | Standard | 1200V | 30A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 15A TO220AC |
4,212 |
|
- | Standard | 1000V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 100A TO218 |
5,436 |
|
- | Standard | 600V | 100A | 1.6V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 250µA @ 600V | - | Through Hole | TO-218-1 | TO-218 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 150A TO218 |
2,484 |
|
- | Standard | 600V | 150A | 1.6V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 250µA @ 600V | - | Through Hole | TO-218-1 | TO-218 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 80A TO218 |
2,520 |
|
- | Standard | 600V | 80A | 1.6V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 600V | - | Through Hole | TO-218-1 | TO-218 | - |
|
|
|
ON Semiconductor |
DIODE GEN PURP 85V 200MA SOT23-3 |
6,120 |
|
- | Standard | 85V | 200mA | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 6ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 250V 200MA SOT23 |
6,246 |
|
- | Standard | 250V | 200mA | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 150°C (Max) |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOT23-3 |
4,914 |
|
- | Schottky | 30V | 200mA | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 200MA SOT23 |
3,798 |
|
- | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 600V 1A DO41 |
2,178 |
|
- | Standard | 600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A MFLAT |
7,038 |
|
- | Schottky | 30V | 3A | 370mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A MFLAT |
6,768 |
|
- | Schottky | 30V | 3A | 400mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A MFLAT |
6,804 |
|
- | Schottky | 30V | 3A | 450mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 5A MFLAT |
5,508 |
|
- | Schottky | 30V | 5A | 370mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 30V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A MFLAT |
8,874 |
|
- | Schottky | 30V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 2A MFLAT |
7,344 |
|
- | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 1A SFLAT |
7,902 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A SFLAT |
5,580 |
|
- | Schottky | 30V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A SFLAT |
5,796 |
|
- | Schottky | 40V | 1A | 510mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
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|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A SFLAT |
2,484 |
|
- | Schottky | 30V | 1.5A | 360mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A SFLAT |
7,632 |
|
- | Schottky | 30V | 1.5A | 460mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A SFLAT |
6,408 |
|
- | Schottky | 30V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 200V 200MA SOT523 |
2,934 |
|
- | Standard | 200V | 200mA | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | Surface Mount | SOT-523 | SOT-523 | -65°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 85V 215MA SOT523 |
5,004 |
|
- | Standard | 85V | 215mA (DC) | 1.25V @ 150mA | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5nA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SOT-523 | SOT-523 | -65°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 130V 215MA SOD123 |
6,318 |
|
- | Standard | 130V | 215mA (DC) | 1.25V @ 150mA | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 35V 8A DPAK |
7,380 |
|
- | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 125°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 40V 10A DPAK |
7,524 |
|
- | Schottky | 40V | 10A | 510mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 35V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |