Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 627/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A TO247AC |
6,066 |
|
HEXFRED® | Standard | 1200V | 8A | 3.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 10µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
|
|
|
WeEn Semiconductors |
BYC100W-1200P/TO247-2L/STANDARD |
1,655 |
|
EEPP™ | Standard | 1200V | 100A | 3.3V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
|
|
|
Semtech |
DIODE GEN PURP 16KV 3MA AXIAL |
8,208 |
|
- | Standard | 16000V | 3mA | 52V @ 20mA | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100nA @ 16000V | 4pF @ 5V, 1MHz | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 400V 400MA DO213 |
7,992 |
|
- | Standard | 400V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
|
|
|
Microsemi |
ZENER DIODE |
3,708 |
|
Military, MIL-PRF-19500/116 | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
IXYS |
DIODE GP 1.2KV 30A ISOPLUS220 |
2,052 |
|
- | Standard | 1200V | 30A | 1.45V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Through Hole | ISOPLUS220™ | ISOPLUS220™ | -55°C ~ 150°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 30A TO220-2 |
2,160 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 30A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 600V | 527pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -50°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
3,384 |
|
Military, MIL-PRF-19500/286 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 1KV 1A AXIAL |
3,472 |
|
- | Standard | 1000V | 1A | 2.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 1000V | 30pF @ 5V, 1MHz | Through Hole | Axial | - | - |
|
|
|
ON Semiconductor |
DIODE SBD 10A 120V D2PAK-3 |
5,798 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 10A TO220-2 |
6,570 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 10A (DC) | 2.1V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 600V | 290pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 16A DO203AA |
8,244 |
|
- | Standard, Reverse Polarity | 200V | 16A | 1.4V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 50µA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 6A DO203AA |
2,052 |
|
- | Standard, Reverse Polarity | 800V | 6A | 1.1V @ 19A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A DO203AA |
5,886 |
|
- | Standard, Reverse Polarity | 200V | 6A | 1.1V @ 19A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 6A DO203AA |
4,734 |
|
- | Standard | 800V | 6A | 1.1V @ 19A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A DO203AA |
4,950 |
|
- | Standard | 400V | 6A | 1.1V @ 19A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
6,390 |
|
FRED Pt® | Standard | 600V | 30A | 2.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 31ns | 50µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC |
8,838 |
|
- | Standard | 1200V | 80A | 1.17V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GP 600V 150A POWERTAB |
7,488 |
|
FRED Pt® | Standard | 600V | 150A | 1.63V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 8µA @ 600V | - | Through Hole | PowerTab® | PowerTab® | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE SCHOTTKY 8V 40A TO247AD |
3,042 |
|
- | Schottky | 8V | 40A | 340mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200mA @ 8V | - | Through Hole | TO-3P-3 Full Pack | TO-247AD | -55°C ~ 150°C |
|
|
|
SMC Diode Solutions |
PIV 200V IO 90A TRR 70NS CHIP SI |
3,996 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
MICROSS/On Semiconductor |
DIODE GEN PURP 100V 200MA DIE |
8,478 |
|
- | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | Die | Die | -55°C ~ 175°C |
|
|
|
MICROSS/On Semiconductor |
DIODE GEN PURP 100V 200MA DIE |
7,506 |
|
Automotive, AEC-Q101 | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | - | Die | Die | -55°C ~ 175°C |
|
|
|
MICROSS/On Semiconductor |
DIODE GEN PURP 20V 50MA DIE |
7,398 |
|
- | Standard | 20V | 50mA | 1.1V @ 50mA | Standard Recovery >500ns, > 200mA (Io) | 700ns | 50nA @ 20V | 1pF @ 0V, 1MHz | Surface Mount | Die | Die | 175°C (Max) |
|
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|
MICROSS/On Semiconductor |
DIE DIODE GENERAL PURPOSE |
5,760 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
MICROSS/On Semiconductor |
DIE DIODE GENERAL PURPOSE |
5,364 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 100V 6A DO4 |
8,442 |
|
- | Standard | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 100V 6A DO4 |
2,394 |
|
- | Standard, Reverse Polarity | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 6A DO4 |
4,662 |
|
- | Standard | 200V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 6A DO4 |
7,038 |
|
- | Standard, Reverse Polarity | 200V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |