VS-HFA08PB120-N3
For Reference Only
| Part Number | VS-HFA08PB120-N3 |
| PNEDA Part # | VS-HFA08PB120-N3 |
| Description | DIODE GEN PURP 1.2KV 8A TO247AC |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 6,066 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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VS-HFA08PB120-N3 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | VS-HFA08PB120-N3 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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VS-HFA08PB120-N3 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | HEXFRED® |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 3.3V @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 95ns |
| Current - Reverse Leakage @ Vr | 10µA @ 1200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247AC Modified |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 12A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 12A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 190µA @ 650V Capacitance @ Vr, F 360pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package PG-TO247-3 Operating Temperature - Junction -55°C ~ 175°C |
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