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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 616/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
APT15DQ100BG
Microsemi
DIODE GEN PURP 1KV 15A TO247
8,838
-
Standard
1000V
15A
3V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
235ns
100µA @ 1000V
-
Through Hole
TO-247-3
TO-247 [B]
-55°C ~ 175°C
APT30DQ100KG
Microsemi
DIODE GEN PURP 1KV 30A TO220
3,798
-
Standard
1000V
30A
3V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
295ns
100µA @ 1000V
-
Through Hole
TO-220-2
TO-220 [K]
-55°C ~ 175°C
IDC10D120T6MX1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 15A WAFER
5,958
-
Standard
1200V
15A
2.05V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
3.5µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
VS-APH3006L-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 30A TO247-3
5,256
FRED Pt®
Standard
600V
30A
2.65V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
26ns
30µA @ 600V
-
Through Hole
TO-247-3
TO-247-3
-65°C ~ 175°C
VS-EPH3006L-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 30A TO247-2
2,250
FRED Pt®
Standard
600V
30A
2.65V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
26ns
30µA @ 600V
-
Through Hole
TO-247-2
TO-247-2
-65°C ~ 175°C
APT15D120KG
Microsemi
DIODE GEN PURP 1.2KV 15A TO220
3,960
-
Standard
1200V
15A
2.5V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
260ns
250µA @ 1200V
-
Through Hole
TO-220-3
TO-220 [K]
-55°C ~ 175°C
VS-15ETH03SPBF
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 15A TO263AB
3,690
Automotive, AEC-Q101, FRED Pt®
Standard
300V
15A
1.25V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
32ns
40µA @ 300V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-65°C ~ 175°C
IDDD08G65C6XTMA1
Infineon Technologies
SIC DIODES
5,778
CoolSiC™+
Silicon Carbide Schottky
650V
24A (DC)
-
No Recovery Time > 500mA (Io)
0ns
27µA @ 420V
401pF @ 1V, 1MHz
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
DHG20I1200PA
IXYS
DIODE GEN PURP 1.2KV 20A TO220AC
6,732
-
Standard
1200V
20A
2.7V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
30µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
UFS530GE3/TR13
Microsemi
DIODE GEN PURP 300V 5A DO215AB
3,402
-
Standard
300V
5A
1.2V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
-
Surface Mount
DO-215AB, SMC Gull Wing
DO-215AB
-55°C ~ 175°C
UPS3200/TR13
Microsemi
DIODE SCHOTTKY 3A 200V POWERMITE
5,472
*
-
-
-
-
-
-
-
-
-
-
-
-
VS-APU3006HN3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 30A TO247AC
2,088
Automotive, AEC-Q101, FRED Pt®
Standard
600V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
30µA @ 600V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
APT15DQ120BG
Microsemi
DIODE GEN PURP 1.2KV 15A TO247
8,100
-
Standard
1200V
15A
3.3V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
240ns
100µA @ 1200V
-
Through Hole
TO-247-3
TO-247 [B]
-55°C ~ 175°C
SIDC10D120H8X1SA2
Infineon Technologies
DIODE GEN PURP 1.2KV 15A WAFER
5,328
-
Standard
1200V
15A (DC)
1.97V @ 7.5A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
UFS305J/TR13
Microsemi
DIODE GEN PURP 50V 3A DO214AB
4,536
-
Standard
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
UFS310J/TR13
Microsemi
DIODE GEN PURP 100V 3A DO214AB
4,014
-
Standard
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
UFS315J/TR13
Microsemi
DIODE GEN PURP 150V 3A DO214AB
5,364
-
Standard
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 150V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
UFS320J/TR13
Microsemi
DIODE GEN PURP 200V 3A DO214AB
7,686
-
Standard
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
UFS330J/TR13
Microsemi
DIODE GEN PURP 300V 3A DO214AB
5,490
-
Standard
300V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
UFS340J/TR13
Microsemi
DIODE GEN PURP 400V 3A DO214AB
7,650
-
Standard
400V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
UFS350J/TR13
Microsemi
DIODE GEN PURP 500V 3A DO214AB
6,984
-
Standard
500V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 500V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
UFS360J/TR13
Microsemi
DIODE GEN PURP 600V 3A DO214AB
6,984
-
Standard
600V
3A
1.2V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
UFS370J/TR13
Microsemi
DIODE GEN PURP 700V 3A DO214AB
7,542
-
Standard
700V
3A
1.2V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 700V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
UFS380J/TR13
Microsemi
DIODE GEN PURP 800V 3A DO214AB
3,240
-
Standard
800V
3A
1.2V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 800V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
ISL9R1560G2-F085
ON Semiconductor
DIODE GEN PURP 600V 15A TO247
7,686
Automotive, AEC-Q101, Stealth™
Standard
600V
15A
2.2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
100µA @ 600V
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
VS-APU6006-N3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 30A TO247AC
2,646
FRED Pt®
Standard
600V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
30µA @ 600V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
STPSC12065D
STMicroelectronics
DIODE SCHOTTKY 650V 12A TO220AC
8,514
ECOPACK®2
Silicon Carbide Schottky
650V
12A
1.45V @ 12A
No Recovery Time > 500mA (Io)
0ns
150µA @ 650V
750pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
VS-10ETF10-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 10A TO220AC
8,784
-
Standard
1000V
10A
1.33V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
310ns
100µA @ 1000V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
VS-ETH1506STRLHM3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 15A TO263AB
1,721
Automotive, AEC-Q101, FRED Pt®
Standard
600V
15A
2.45V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
15µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-65°C ~ 175°C
VS-ETH1506STRRHM3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 15A TO263AB
3,528
Automotive, AEC-Q101, FRED Pt®
Standard
600V
15A
2.45V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
15µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-65°C ~ 175°C