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VS-ETH1506STRRHM3

VS-ETH1506STRRHM3

For Reference Only

Part Number VS-ETH1506STRRHM3
PNEDA Part # VS-ETH1506STRRHM3
Description DIODE GEN PURP 600V 15A TO263AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 3,528
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 22 - Dec 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-ETH1506STRRHM3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-ETH1506STRRHM3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-ETH1506STRRHM3, VS-ETH1506STRRHM3 Datasheet (Total Pages: 9, Size: 205.4 KB)
PDFVS-ETH1506STRRHM3 Datasheet Cover
VS-ETH1506STRRHM3 Datasheet Page 2 VS-ETH1506STRRHM3 Datasheet Page 3 VS-ETH1506STRRHM3 Datasheet Page 4 VS-ETH1506STRRHM3 Datasheet Page 5 VS-ETH1506STRRHM3 Datasheet Page 6 VS-ETH1506STRRHM3 Datasheet Page 7 VS-ETH1506STRRHM3 Datasheet Page 8 VS-ETH1506STRRHM3 Datasheet Page 9

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VS-ETH1506STRRHM3 Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101, FRED Pt®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)15A
Voltage - Forward (Vf) (Max) @ If2.45V @ 15A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr15µA @ 600V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB (D²PAK)
Operating Temperature - Junction-65°C ~ 175°C

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Series

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Diode Type

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Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

15A

Voltage - Forward (Vf) (Max) @ If

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Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

210ns

Current - Reverse Leakage @ Vr

15µA @ 600V

Capacitance @ Vr, F

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Mounting Type

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Package / Case

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Supplier Device Package

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Operating Temperature - Junction

-65°C ~ 175°C

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Manufacturer

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Series

-

Diode Type

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Voltage - DC Reverse (Vr) (Max)

1800V

Current - Average Rectified (Io)

165A

Voltage - Forward (Vf) (Max) @ If

1.5V @ 60A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

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Capacitance @ Vr, F

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Mounting Type

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Package / Case

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Supplier Device Package

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Operating Temperature - Junction

-55°C ~ 150°C

CSICD10-1200 TR13

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.7V @ 10A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

250µA @ 1200V

Capacitance @ Vr, F

500pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

Operating Temperature - Junction

-55°C ~ 175°C

SS36HE3_A/I

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

3A

Voltage - Forward (Vf) (Max) @ If

750mV @ 3A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

500µA @ 60V

Capacitance @ Vr, F

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Mounting Type

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Package / Case

DO-214AB, SMC

Supplier Device Package

DO-214AB (SMC)

Operating Temperature - Junction

-55°C ~ 150°C

AR4PDHM3_A/H

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101, eSMP®

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.6V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

140ns

Current - Reverse Leakage @ Vr

10µA @ 200V

Capacitance @ Vr, F

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Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

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Operating Temperature - Junction

-55°C ~ 175°C

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