Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 608/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SCHOTTKY 100V 1A DO215AA |
6,768 |
|
- | Schottky | 100V | 1A | 840mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-215AA, SMB Gull Wing | DO-215AA | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 80V 1A DO215AA |
7,308 |
|
- | Schottky | 80V | 1A | 840mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 80V | - | Surface Mount | DO-215AA, SMB Gull Wing | DO-215AA | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 90V 1A DO215AA |
6,066 |
|
- | Schottky | 90V | 1A | 840mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-215AA, SMB Gull Wing | DO-215AA | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE SCHOTTKY 45V 16A TO220AC |
2,322 |
|
- | Schottky | 45V | 16A | 480mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 800V 20A TO263 |
6,480 |
|
- | Standard | 800V | 20A | 1.2V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 4pF @ 400V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 650V 4A TO252 |
7,038 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 13.5A (DC) | 1.8V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 251pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO263AB |
5,778 |
|
- | Standard | 800V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 800V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 25A TO263AB |
2,070 |
|
- | Standard | 800V | 25A | 1.14V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 800V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 25A TO263AB |
4,284 |
|
- | Standard | 800V | 25A | 1.14V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 800V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 25A TO263AB |
8,082 |
|
- | Standard | 1000V | 25A | 1.14V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 25A TO263AB |
4,140 |
|
- | Standard | 1000V | 25A | 1.14V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 25A TO263AB |
7,164 |
|
- | Standard | 1200V | 25A | 1.14V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 25A TO263AB |
7,524 |
|
- | Standard | 1200V | 25A | 1.14V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 5A TO263-2 |
3,508 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 830µA @ 650V | 160pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
PIV 100V IO 30A CHIP SIZE 175MIL |
2,610 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
PIV 200V IO 30A CHIP SIZE 175MIL |
3,510 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 650V 60A TO220-2 |
6,444 |
|
- | Standard | 650V | 60A (DC) | 2.2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 40µA @ 650V | - | Through Hole | TO-220-2 | PG-TO220-2-1 | -40°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 300V 15A TO220AC |
6,822 |
|
HiPerFRED™ | Standard | 300V | 15A | 1.26V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 300V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
Littelfuse |
RECT 1000V 20A TO220 ISO |
5,760 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
SIC DIODE 650V 4A |
6,246 |
|
- | Silicon Carbide Schottky | 650V | 4A | 1.75V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 247pF @ 1V, 100kHz | Surface Mount | 4-PowerTSFN | 4-PQFN (8x8) | -55°C ~ 175°C |
|
|
|
Power Integrations |
DIODE GEN PURP 600V 15A TO220AC |
5,220 |
|
Qspeed™ | Standard | 600V | 15A | 3.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
|
IXYS |
DIODE SCHOTTKY 25V 25A TO220AC |
2,052 |
|
- | Schottky | 25V | 25A | 520mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20mA @ 25V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
IXYS |
DIODE SCHOTTKY 100V 30A TO220AC |
2,646 |
|
- | Schottky | 100V | 30A | 950mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 900µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 1.2KV 10A TO220AC |
5,796 |
|
- | Standard | 1200V | 10A | 2.22V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
650V 4A SIC SBD |
5,724 |
|
- | Silicon Carbide Schottky | 650V | 7.7A (DC) | 1.75V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200mA @ 650V | 258pF @ 1V, 100kHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK-2 (TO-263-2) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO263AB |
6,660 |
|
- | Standard | 400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Littelfuse |
DIODE GEN PURP 400V 15.9A TO220 |
5,022 |
|
- | Standard | 400V | 15.9A | - | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 400V | - | Through Hole | TO-220-3 Isolated Tab | TO-220AB-L | -40°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 20A TO263AB |
6,156 |
|
- | Standard | 200V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 60A TO247AC |
6,192 |
|
FRED Pt® | Standard | 300V | 60A | 1.45V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 10µA @ 300V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A D-PAK |
4,104 |
|
- | Standard | 800V | 8A | 1.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 800V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |