Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 607/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
SILICON SWITCHING DIODES |
4,590 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
PIV 150V IO 15A CHIP SIZE 125MIL |
7,704 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
PIV 150V IO 15A CHIP SIZE 125MIL |
7,110 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
PIV 200V IO 15A CHIP SIZE 125MIL |
5,346 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
PIV 100V IO 15A CHIP SIZE 125MIL |
8,892 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 28A TO220-2 |
4,698 |
|
- | Standard | 1200V | 28A (DC) | 2.15V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 600V 10A TO220AC |
3,834 |
|
HiPerFRED™ | Standard | 600V | 10A | 2.1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 60µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 600V 10A TO220AC |
5,778 |
|
HiPerFRED™ | Standard | 600V | 10A | 2.66V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 60µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 15V 3A DO214AB |
2,646 |
|
- | Schottky | 15V | 3A | 320mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 15V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 125°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 3A TO220-2 |
7,974 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 3A (DC) | 2.3V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO252-3 |
6,714 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 4A (DC) | 2.3V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 25µA @ 600V | 80pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Power Integrations |
DIODE GEN PURP 600V 8A TO263AB |
8,064 |
|
Qspeed™ | Standard | 600V | 8A | 3.15V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 11.1ns | 250µA @ 600V | 25pF @ 10V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO263AB |
4,644 |
|
- | Standard | 800V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 800V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 1A 20V SMBG |
2,916 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 1A 30V SMBG |
8,442 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 1A 40V SMBG |
6,804 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO263AB |
5,220 |
|
- | Standard | 1200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO263AB |
6,894 |
|
- | Standard | 1200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A D2PAK |
5,202 |
|
HEXFRED® | Standard | 600V | 25A (DC) | 2V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A D2PAK |
3,096 |
|
HEXFRED® | Standard | 600V | 25A (DC) | 2V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 400V 10A TO220FP |
5,400 |
|
HiPerFRED²™ | Standard | 400V | 10A | 1.32V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 1µA @ 400V | - | Through Hole | TO-220-2 Full Pack | TO-220FP | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 600V 10A TO220FP |
8,730 |
|
- | Standard | 600V | 10A | 2.35V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 15µA @ 600V | - | Through Hole | TO-220-3 Full Pack | TO-220FPAB | -55°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 600V 8A TO263AB |
7,776 |
|
FRED | Standard | 600V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
|
|
|
IXYS |
DIODE SCHOTTKY 45V 16A TO-220AC |
8,442 |
|
- | Schottky | 45V | 16A | 670mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 50V 1A DO215AA |
7,938 |
|
- | Schottky | 50V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | - | Surface Mount | DO-215AA, SMB Gull Wing | DO-215AA | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 60V 1A DO215AA |
4,572 |
|
- | Schottky | 60V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | DO-215AA, SMB Gull Wing | DO-215AA | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 1A 70V SMBG |
8,586 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
IXYS |
DIODE GEN PURP 1600V 10A TO220AC |
8,982 |
|
- | Standard | 1600V | 10A | 1.26V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | 4pF @ 400V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 7.5A WAFER |
8,226 |
|
- | Standard | 1200V | 7.5A (DC) | 1.97V @ 7.5A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 150MA DO213AA |
2,376 |
|
- | Standard | 75V | 150mA | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |