Rectifiers - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 451/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 1A DO214AC |
5,148 |
|
- | Standard | 150V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AC |
4,284 |
|
- | Standard | 200V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
|
Diodes Incorporated |
DIODE SCHOTTKY 90V 3A SMB |
4,968 |
|
- | Schottky | 90V | 3A | 790mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 90V | 105pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO214AB |
2,268 |
|
- | Standard | 50V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB |
6,372 |
|
- | Standard | 100V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 3A DO214AB |
6,588 |
|
- | Standard | 150V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
4,266 |
|
- | Standard | 200V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB |
4,680 |
|
- | Standard | 100V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 100V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 3A DO214AB |
6,354 |
|
- | Standard | 150V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 150V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
7,236 |
|
- | Standard | 200V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5A DO221AC |
8,280 |
|
TMBS®, SlimSMA™ | Schottky | 60V | 5A (DC) | 470mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | 540pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A DO214AC |
3,418 |
|
- | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 20V 2A 2DSN |
3,474 |
|
Automotive, AEC-Q101 | Schottky | 20V | 2A (DC) | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 28ns | 80µA @ 20V | 75pF @ 2V, 1MHz | Surface Mount | 2-XDFN | 2-DSN (1x.60) | 150°C (Max) |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO214AB |
7,866 |
|
- | Standard | 50V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB |
8,352 |
|
- | Standard | 100V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 3A DO214AB |
2,214 |
|
- | Standard | 150V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
4,428 |
|
- | Standard | 200V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 8A DO214AB |
3,400 |
|
- | Standard | 400V | 8A | - | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A DO214AB |
4,464 |
|
- | Standard | 600V | 8A | - | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 8A DO214AB |
8,262 |
|
- | Standard | 800V | 8A | - | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 8A DO214AB |
4,986 |
|
- | Standard | - | 8A | - | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 800V 500MA S-FLAT |
4,338 |
|
- | Standard | 800V | 500mA | 3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 800V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A US-FLAT |
7,326 |
|
- | Schottky | 30V | 1.5A | 460mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 30V | 50pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | 150°C (Max) |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
4,104 |
|
SUPERECTIFIER® | Standard | 100V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 500MA DO213 |
7,848 |
|
SUPERECTIFIER® | Standard | 600V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 500MA DO213AA |
3,598 |
|
SUPERECTIFIER® | Standard | 50V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
5,796 |
|
SUPERECTIFIER® | Standard | 100V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 500MA DO213 |
3,726 |
|
SUPERECTIFIER® | Standard | 200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 500MA DO213 |
5,058 |
|
SUPERECTIFIER® | Standard | 400V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 500MA DO213 |
6,372 |
|
SUPERECTIFIER® | Standard | 600V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |