Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 385/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AC |
8,082 |
|
- | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A DO214AC |
2,268 |
|
- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A DO214AC |
4,122 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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ON Semiconductor |
DIODE GP 100V 3A SMB |
3,510 |
|
Automotive, AEC-Q101 | Standard | 100V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 100V | 18pF @ 0V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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ON Semiconductor |
DIODE GP 800V 3A SMB |
8,316 |
|
Automotive, AEC-Q101 | Standard | 800V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 800V | 18pF @ 0V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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ON Semiconductor |
DIODE GEN PURP 600V 2A SMA |
3,528 |
|
Automotive, AEC-Q101 | Standard | 600V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 175°C |
|
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Diodes Incorporated |
DIODE GEN PURP 1KV 1A POWRDI 123 |
3,438 |
|
- | Standard | 1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 1000V | 4pF @ 4V, 1MHz | Surface Mount | POWERDI®123 | PowerDI™ 123 | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 2A DO214AA |
2,124 |
|
- | Standard | 800V | 2A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 800V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO219AB |
7,632 |
|
- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3µA @ 60V | 90pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A DO219AB |
7,326 |
|
- | Schottky | 60V | 2A | 780mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3µA @ 60V | 90pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
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ON Semiconductor |
DIODE GPP 1.5A SMA DO-214AC |
5,418 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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ON Semiconductor |
DIODE GPP 1.5A SMA DO-214AC |
7,992 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A DO214AC |
7,128 |
|
- | Standard | 100V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 1µA @ 100V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AC |
4,032 |
|
- | Standard | 200V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 1µA @ 200V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
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Rohm Semiconductor |
DIODE GEN PURP 100V 500MA TUMD2 |
4,212 |
|
- | Standard | 100V | 500mA | 980mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 100V | - | Surface Mount | SC-90, SOD-323F | TUMD2 | 150°C (Max) |
|
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Vishay Semiconductor Diodes Division |
DIODE GP 800V 700MA DO219AB |
6,228 |
|
- | Standard | 800V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 800V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
4,446 |
|
eSMP® | Standard | 100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | 9pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO220AA |
6,786 |
|
eSMP® | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 600V | 9pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A SFLAT |
5,400 |
|
- | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
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Nexperia |
DIODE SCHOTTKY 20V 500MA SOD323 |
6,912 |
|
- | Schottky | 20V | 500mA (DC) | 390mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | 66pF @ 1V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C (Max) |
|
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Nexperia |
DIODE SCHOTTKY 30V 500MA SC90 |
7,614 |
|
- | Schottky | 30V | 500mA (DC) | 430mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | 55pF @ 1V, 1MHz | Surface Mount | SC-90, SOD-323F | SC-90 | 150°C (Max) |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A MPG06 |
6,678 |
|
- | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A MPG06 |
2,484 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A MPG06 |
7,308 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A MPG06 |
4,518 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A MPG06 |
2,610 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A MPG06 |
6,192 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 1000V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A MPG06 |
8,046 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
2A,60V,SMF,TRENCH SKY RECT. |
6,858 |
|
eSMP®, TMBS® | Schottky | 60V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 480µA @ 60V | 250pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
3A,45V,SMF,TRENCH SKY RECT. |
7,308 |
|
eSMP®, TMBS® | Schottky | 45V | 3A | 580mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 750µA @ 45V | 370pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -40°C ~ 150°C |