MPG06BHE3_A/54
For Reference Only
| Part Number | MPG06BHE3_A/54 |
| PNEDA Part # | MPG06BHE3_A-54 |
| Description | DIODE GEN PURP 100V 1A MPG06 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 2,484 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MPG06BHE3_A/54 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | MPG06BHE3_A/54 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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MPG06BHE3_A/54 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 600ns |
| Current - Reverse Leakage @ Vr | 5µA @ 100V |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | MPG06, Axial |
| Supplier Device Package | MPG06 |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Semtech Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1.25A Voltage - Forward (Vf) (Max) @ If 2.5V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 30ns Current - Reverse Leakage @ Vr 1µA @ 200V Capacitance @ Vr, F 30pF @ 5V, 1MHz Mounting Type Through Hole Package / Case Axial Supplier Device Package - Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series SUPERECTIFIER® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F 8pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-213AB, MELF (Glass) Supplier Device Package DO-213AB Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 6A (DC) Voltage - Forward (Vf) (Max) @ If 1.8V @ 6A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 1.1mA @ 650V Capacitance @ Vr, F 190pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package PG-TO263-2 Operating Temperature - Junction -55°C ~ 175°C |
