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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

Records 34,936

Page 355/1165

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
US1DHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	2,970	Automotive, AEC-Q101	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1GHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	6,192	Automotive, AEC-Q101	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1JHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	3,454	Automotive, AEC-Q101	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1KHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	7,452	Automotive, AEC-Q101	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1MHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO214AC	8,802	Automotive, AEC-Q101	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1AFA	ON Semiconductor	DIODE GEN PURP 50V 1A SOD123FA	8,676	Automotive, AEC-Q101	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123FA	-55°C ~ 150°C
SS16L RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	3,418	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS2GA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	3,402	-	Standard	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2JA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO214AC	4,050	-	Standard	600V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HER101G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	7,956	-	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HER102G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	8,982	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HER103G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	5,922	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HER104G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO204AL	4,968	-	Standard	300V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HER106G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	2,808	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HER107G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	7,668	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HER108G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	5,112	-	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1A R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	5,076	-	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4001 R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	8,784	-	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4001HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	6,264	Automotive, AEC-Q101	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4002 R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	7,974	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4002HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	6,138	Automotive, AEC-Q101	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4003 R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	2,304	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4003HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	3,456	Automotive, AEC-Q101	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4004 R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	6,192	-	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4004HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	4,338	Automotive, AEC-Q101	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4005 R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	5,472	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4005HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	8,874	Automotive, AEC-Q101	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS16L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	7,974	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SF12G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	7,272	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF13G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO204AL	2,772	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C

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