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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

Records 34,936

Page 352/1165

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
ACGRKM4006-HF	Comchip Technology	DIODE GEN PURP 800V 1A SOD123F	6,138	Automotive, AEC-Q101	Standard	800V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
CFRA107-G	Comchip Technology	DIODE GEN PURP 1KV 1A DO214AC	2,070	-	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	150°C (Max)
D7G-T	Diodes Incorporated	DIODE GEN PURP 1KV 1A T1	8,208	-	Standard	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 1000V	8pF @ 4V, 1MHz	Through Hole	T1, Axial	T-1	-65°C ~ 150°C
ACDBA160-HF	Comchip Technology	DIODE SCHOTTKY 60V 1A DO214AC	8,046	Automotive, AEC-Q101	Schottky	60V	1A (DC)	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	60pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS315-HF	Comchip Technology	DIODE SCHOTTKY 150V 3A DO214AC S	7,092	*	-	-	-	-	-	-	-	-	-	-	-	-
HS1A M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	8,640	-	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1B M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	7,524	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1D M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	8,802	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1F M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO214AC	8,208	-	Standard	300V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1G M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	7,992	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1J M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	7,452	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2AA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO214AC	5,940	-	Standard	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1A M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	6,642	-	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1B M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	4,662	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1D M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	8,226	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1G M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	3,204	-	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1J M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	2,142	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RSFALHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 500MA SUB SMA	4,464	Automotive, AEC-Q101	Standard	50V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFBLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 500MA SUBSMA	6,102	Automotive, AEC-Q101	Standard	100V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFDLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 500MA SUBSMA	3,024	Automotive, AEC-Q101	Standard	200V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
B0520LW RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 14V 500MA SOD123	7,902	-	Schottky	14V	500mA	385mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 20V	170pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
RGP10A	ON Semiconductor	DIODE GEN PURP 50V 1A DO41	2,610	-	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
RGP10B	ON Semiconductor	DIODE GEN PURP 100V 1A DO41	4,140	-	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
RGP10D	ON Semiconductor	DIODE GEN PURP 200V 1A DO41	5,976	-	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
BASH21LT1G	ON Semiconductor	HIGH VOLT DIODE	2,934	*	-	-	-	-	-	-	-	-	-	-	-	-
NSVBAS16WT3G	ON Semiconductor	DIODE GEN PURP 100V 200MA SC70	5,544	Automotive, AEC-Q101	Standard	100V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	6ns	1µA @ 100V	-	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)	-55°C ~ 150°C
S1KLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	3,528	Automotive, AEC-Q101	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1MLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A SUB SMA	3,690	Automotive, AEC-Q101	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
RB162M-40TR	Rohm Semiconductor	DIODE SCHOTTKY 40V 1A PMDU	8,622	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
ER2ETR	SMC Diode Solutions	DIODE GEN PURP 300V 2A SMB	8,730	-	Standard	300V	2A	1.25V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C

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