Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 26/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Cree/Wolfspeed |
DIODE SCHKY SIC 650V 20A TO-220 |
2,833 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 57A (DC) | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 650V | 1100pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 10A TO252-2 |
252,672 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 33A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 754pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 10A TO220-2 |
15,774 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 33A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 754pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
1200V 50A SIC SBD |
23,832 |
|
- | Silicon Carbide Schottky | 1200V | 77A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 2560pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.7KV 14.4A TO247 |
5,913 |
|
Z-Rec® | Silicon Carbide Schottky | 1700V | 14.4A (DC) | 2V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1700V | 827pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 20A TO220-2 |
17,646 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 54.5A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1500pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 40A D-55 |
19,014 |
|
- | Standard | 600V | 40A | - | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 600V | - | Chassis Mount | D-55 T-Module | D-55 | - |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 650V 100A TO247-3 |
348 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 100A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 1970pF @ 0V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 40A D-55 |
8,316 |
|
- | Standard | 1000V | 40A | - | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 1000V | - | Chassis Mount | D-55 T-Module | D-55 | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 70A D-55 |
8,424 |
|
- | Standard | 600V | 70A | - | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 600V | - | Chassis Mount | D-55 T-Module | D-55 | - |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 1.2KV 300A F2 |
6,216 |
|
- | Standard | 1200V | 300A | 1.8V @ 300A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5mA @ 1200V | - | Chassis Mount | F2 Module | F2 | -40°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 200V 582A Y4-M6 |
5,742 |
|
- | Standard | 200V | 582A | 1.25V @ 520A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5mA @ 200V | - | Chassis Mount | Y4-M6 | Y4-M6 | -40°C ~ 150°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.7KV 26.3A TO247 |
22,296 |
|
Z-Rec® | Silicon Carbide Schottky | 1700V | 26.3A (DC) | 2.5V @ 25A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1700V | 2079pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 3A B-MELF |
1,027 |
|
- | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 125°C |
|
|
|
IXYS |
DIODE GEN PURP 24KV 2A UGE |
4,554 |
|
- | Standard | 24000V | 2A | 18V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 1mA @ 24000V | - | Chassis Mount | UGE | UGE | - |
|
|
|
IXYS |
DIODE GEN PURP 1.2KV 560A Y1-CU |
6,840 |
|
- | Standard | 1200V | 560A | 1.3V @ 1200A | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1200V | 762pF @ 400V, 1MHz | Chassis Mount | Y1-CU | Y1-CU | - |
|
|
|
Powerex Inc. |
DIODE GP 800V 600A POWRBLOK |
7,362 |
|
- | Standard | 800V | 600A | 1.19V @ 1800A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 800V | - | Chassis Mount | POW-R-BLOK™ Module | POW-R-BLOK™ Module | - |
|
|
|
Powerex Inc. |
DIODE GP 1.8KV 600A POWRBLOK |
6,132 |
|
- | Standard | 1800V | 600A | 1.19V @ 1800A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 1800V | - | Chassis Mount | POW-R-BLOK™ Module | POW-R-BLOK™ Module | - |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
318,360 |
|
- | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
1,389,294 |
|
- | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
1,968,606 |
|
- | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
1,147,326 |
|
- | Standard | 100V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 200MA SOD80 |
735,858 |
|
- | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | -65°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 150MA DO35 |
339,102 |
|
- | Standard | 100V | 150mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
15,158 |
|
- | Standard | 100V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 90V 150MA DO34 |
560,994 |
|
- | Standard | 90V | 150mA | 1.2V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 4pF @ 0V, 1MHz | Through Hole | DO-204AG, DO-34, Axial | DO-34 | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 300MA DO35 |
2,936,520 |
|
- | Standard | 75V | 300mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 8ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 300MA DO35 |
1,117,614 |
|
- | Standard | 75V | 300mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 8ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 75V 200MA SOT23-3 |
658,248 |
|
- | Standard | 100V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 6ns | 1µA @ 100V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 75V 150MA DO35 |
1,311,174 |
|
- | Standard | 75V | 150mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |