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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 24/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
C3D04060E
Cree/Wolfspeed
DIODE SCHOTTKY 600V 4A TO252-2
205,836
Z-Rec®
Silicon Carbide Schottky
600V
13.5A (DC)
1.7V @ 4A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
251pF @ 0V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
STTH812D
STMicroelectronics
DIODE GEN PURP 1.2KV 8A TO220AC
46,446
-
Standard
1200V
8A
2.2V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
8µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
MBRF40250TG
ON Semiconductor
DIODE SCHOTTKY 250V 40A TO220FP
13,608
SWITCHMODE™
Schottky
250V
40A
970mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
30µA @ 250V
500pF @ 5V, 1MHz
Through Hole
TO-220-3 Full Pack
TO-220FP
-65°C ~ 150°C
GB01SLT12-214
GeneSiC Semiconductor
DIODE SCHOTTKY 1.2KV 2.5A SMB
28,740
-
Silicon Carbide Schottky
1200V
2.5A
1.8V @ 1A
No Recovery Time > 500mA (Io)
0ns
10µA @ 1200V
69pF @ 1V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 175°C
VS-HFA08SD60S-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 8A TO252AA
52,656
HEXFRED®
Standard
600V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
5µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-55°C ~ 150°C
STPSC10H065GY-TR
STMicroelectronics
DIODE SCHTY SIC 650V 10A D2PAK
13,470
Automotive, AEC-Q101
Silicon Carbide Schottky
650V
10A
1.75V @ 10A
No Recovery Time > 500mA (Io)
0ns
100µA @ 650V
480pF @ 0V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
SM74611KTTR
Texas Instruments
DIODE GEN PURP 30V 15A DDPAK
157,992
-
Standard
30V
15A
26mV @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
300nA @ 28V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
DDPAK/TO-263-3
-40°C ~ 125°C
DSEI20-12A
IXYS
DIODE GEN PURP 1.2KV 17A TO220AC
3,299
-
Standard
1200V
17A
2.15V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
750µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
C4D02120A
Cree/Wolfspeed
DIODE SCHOTTKY 1.2KV 2A TO220-2
148,722
Z-Rec®
Silicon Carbide Schottky
1200V
10A (DC)
1.8V @ 2A
No Recovery Time > 500mA (Io)
0ns
50µA @ 1200V
167pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
C4D02120E
Cree/Wolfspeed
DIODE SCHOTTKY 1.2KV 2A TO252-2
53,904
Z-Rec®
Silicon Carbide Schottky
1200V
10A (DC)
1.8V @ 2A
No Recovery Time > 500mA (Io)
0ns
50µA @ 1200V
167pF @ 0V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
SCS210AJTLL
Rohm Semiconductor
DIODE SCHOTTKY 650V 10A TO263AB
20,262
-
Silicon Carbide Schottky
650V
10A (DC)
1.55V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
365pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB
175°C (Max)
STTH1210DI
STMicroelectronics
DIODE GEN PURP 1KV 12A TO220INS
57,114
-
Standard
1000V
12A
2V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
90ns
10µA @ 1000V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
175°C (Max)
1N647-1
Microsemi
DIODE GEN PURP 400V 400MA DO35
26,898
-
Standard
400V
400mA
1V @ 400mA
Standard Recovery >500ns, > 200mA (Io)
-
50nA @ 400V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
GB02SLT12-214
GeneSiC Semiconductor
DIODE SCHOTTKY 1.2KV 2A DO214AA
24,702
-
Silicon Carbide Schottky
1200V
2A (DC)
1.8V @ 1A
No Recovery Time > 500mA (Io)
0ns
50µA @ 1200V
131pF @ 1V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
APT40DQ60BG
Microsemi
DIODE GEN PURP 600V 40A TO247
21,996
-
Standard
600V
40A
2.4V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
25µA @ 600V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
VS-30EPH03PBF
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 30A TO247AC
75,432
FRED Pt®
Standard
300V
30A
1.25V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
60µA @ 300V
-
Through Hole
TO-247-2
TO-247AC Modified
-65°C ~ 175°C
C3D06060F
Cree/Wolfspeed
DIODE SCHOTTKY 600V 6A TO220-F2
87,990
Z-Rec®
Silicon Carbide Schottky
600V
7.5A (DC)
1.8V @ 6A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
294pF @ 0V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220-F2
-55°C ~ 175°C
C3D06060A
Cree/Wolfspeed
DIODE SCHOTTKY 600V 6A TO220-2
56,328
Z-Rec®
Silicon Carbide Schottky
600V
19A (DC)
1.8V @ 6A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
294pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
C3D06060G
Cree/Wolfspeed
DIODE SCHOTTKY 600V 6A TO263-2
52,392
Z-Rec®
Silicon Carbide Schottky
600V
19A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
295pF @ 0V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 175°C
DSEI30-10A
IXYS
DIODE GEN PURP 1KV 30A TO247AD
21,132
-
Standard
1000V
30A
2.4V @ 36A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
750µA @ 1000V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
VS-8EWF12S-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 8A TO252
15,528
-
Standard
1200V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
270ns
100µA @ 1200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
-40°C ~ 150°C
VS-8EWF02S-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 8A TO252AA
12,435
-
Standard
200V
8A
1.2V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
100µA @ 200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
RURG80100
ON Semiconductor
DIODE GEN PURP 1KV 80A TO247
22,896
-
Standard
1000V
80A
1.9V @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
250µA @ 1000V
-
Through Hole
TO-247-2
TO-247-2
-65°C ~ 175°C
RURG5060
ON Semiconductor
DIODE GEN PURP 600V 50A TO247
15,732
-
Standard
600V
50A
1.6V @ 50A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
250µA @ 600V
-
Through Hole
TO-247-2
TO-247-2
-65°C ~ 175°C
1N649-1
Microsemi
DIODE GEN PURP 600V 400MA DO35
21,960
-
Standard
600V
400mA
1V @ 400mA
Standard Recovery >500ns, > 200mA (Io)
-
50nA @ 600V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
VS-40EPS08PBF
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 40A TO247AC
14,400
-
Standard
800V
40A
1.1V @ 40A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 800V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
VS-40EPS12PBF
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 40A TO247AC
87,396
-
Standard
1200V
40A
1.1V @ 40A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 1200V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
DSEP30-12A
IXYS
DIODE GEN PURP 1.2KV 30A TO247AD
27,108
HiPerFRED™
Standard
1200V
30A
2.74V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
250µA @ 1200V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
C3D08060G
Cree/Wolfspeed
DIODE SCHOTTKY 600V 8A TO263-2
14,994
Z-Rec®
Silicon Carbide Schottky
600V
24A (DC)
1.8V @ 8A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
441pF @ 0V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 175°C
DSEI60-06A
IXYS
DIODE GEN PURP 600V 60A TO247AD
30,600
-
Standard
600V
60A
1.8V @ 70A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
200µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C