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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1094/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SF802G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A TO220AB
5,058
-
Standard
100V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF802GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A TO220AB
6,516
Automotive, AEC-Q101
Standard
100V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF803G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 8A TO220AB
5,598
-
Standard
150V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF803GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 8A TO220AB
8,514
Automotive, AEC-Q101
Standard
150V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF804G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AB
4,554
-
Standard
200V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF804GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AB
7,182
Automotive, AEC-Q101
Standard
200V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF805G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 8A TO220AB
2,142
-
Standard
300V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF805GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 8A TO220AB
8,964
Automotive, AEC-Q101
Standard
300V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF806G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AB
6,516
-
Standard
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF806GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AB
6,030
Automotive, AEC-Q101
Standard
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF807G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 8A TO220AB
5,184
-
Standard
500V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF807GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 8A TO220AB
8,316
Automotive, AEC-Q101
Standard
500V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF808GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A TO220AB
5,454
Automotive, AEC-Q101
Standard
600V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SFA1001G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 10A TO220AC
2,070
-
Standard
50V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1001GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 10A TO220AC
3,888
Automotive, AEC-Q101
Standard
50V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1002G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A TO220AC
3,348
-
Standard
100V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1002GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A TO220AC
7,236
Automotive, AEC-Q101
Standard
100V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1003G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 10A TO220AC
7,560
-
Standard
150V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1003GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 10A TO220AC
2,016
Automotive, AEC-Q101
Standard
150V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1004GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A TO220AC
4,284
Automotive, AEC-Q101
Standard
200V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1005GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 10A TO220AC
2,556
Automotive, AEC-Q101
Standard
300V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1006G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 10A TO220AC
7,290
-
Standard
400V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1006GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 10A TO220AC
6,894
Automotive, AEC-Q101
Standard
400V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1007G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 10A TO220AC
3,438
-
Standard
500V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1007GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 10A TO220AC
3,600
Automotive, AEC-Q101
Standard
500V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1008G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO220AC
5,148
-
Standard
600V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1008GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO220AC
7,146
Automotive, AEC-Q101
Standard
600V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA801G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 8A TO220AC
8,172
-
Standard
50V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
100pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA801GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 8A TO220AC
2,484
Automotive, AEC-Q101
Standard
50V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
100pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA802G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A TO220AC
2,358
-
Standard
100V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
100pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C