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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1092/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SF1007G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 10A TO220AB
3,978
-
Standard
500V
10A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1007GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 10A TO220AB
8,604
Automotive, AEC-Q101
Standard
500V
10A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1008GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO220AB
4,680
Automotive, AEC-Q101
Standard
600V
10A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1601G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 16A TO220AB
6,876
-
Standard
50V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1601GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 16A TO220AB
6,912
Automotive, AEC-Q101
Standard
50V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1601PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 16A TO247AD
4,986
-
Standard
50V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1601PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 16A TO247AD
2,772
Automotive, AEC-Q101
Standard
50V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1602G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 16A TO220AB
5,832
-
Standard
100V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1602GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 16A TO220AB
4,014
Automotive, AEC-Q101
Standard
100V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1602PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 16A TO247AD
8,478
-
Standard
100V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1602PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 16A TO247AD
8,046
Automotive, AEC-Q101
Standard
100V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1603G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 16A TO220AB
3,420
-
Standard
150V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1603GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 16A TO220AB
3,438
Automotive, AEC-Q101
Standard
150V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1603PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 16A TO247AD
3,942
-
Standard
150V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1603PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 16A TO247AD
3,816
Automotive, AEC-Q101
Standard
150V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1604GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 16A TO220AB
3,490
Automotive, AEC-Q101
Standard
200V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1604PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 16A TO247AD
4,680
-
Standard
200V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1604PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 16A TO247AD
6,588
Automotive, AEC-Q101
Standard
200V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1605G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 16A TO220AB
7,398
-
Standard
300V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1605GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 16A TO220AB
3,564
Automotive, AEC-Q101
Standard
300V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1605PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 16A TO247AD
7,596
-
Standard
300V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1605PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 16A TO247AD
6,984
Automotive, AEC-Q101
Standard
300V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1606GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 16A TO220AB
2,268
Automotive, AEC-Q101
Standard
400V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1606PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 16A TO247AD
2,088
Automotive, AEC-Q101
Standard
400V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1607G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 16A TO220AB
2,592
-
Standard
500V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1607GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 16A TO220AB
3,204
Automotive, AEC-Q101
Standard
500V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1607PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 16A TO247AD
7,974
-
Standard
500V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1607PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 16A TO247AD
4,734
Automotive, AEC-Q101
Standard
500V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1608GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 16A TO220AB
7,362
Automotive, AEC-Q101
Standard
600V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1608PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 16A TO247AD
2,682
-
Standard
600V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C