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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

Records 34,936

Page 1081/1165

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SRT110HA1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A TS-1	2,826	Automotive, AEC-Q101	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT115 A1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A TS-1	4,950	-	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT115HA1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A TS-1	3,222	Automotive, AEC-Q101	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT14 A1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A TS-1	4,968	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT14HA1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A TS-1	2,304	Automotive, AEC-Q101	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT16HA1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A TS-1	6,210	Automotive, AEC-Q101	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT19 A1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A TS-1	4,986	-	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT19HA1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A TS-1	7,470	Automotive, AEC-Q101	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06A A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 600MA TS-1	4,680	-	Standard	50V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 50V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06AHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 600MA TS-1	5,868	Automotive, AEC-Q101	Standard	50V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 50V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06B A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 600MA TS-1	8,154	-	Standard	100V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 100V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06BHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 600MA TS-1	4,914	Automotive, AEC-Q101	Standard	100V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 100V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06C A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 600MA TS-1	4,932	-	Standard	150V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 150V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06CHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 600MA TS-1	5,886	Automotive, AEC-Q101	Standard	150V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 150V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06D A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 600MA TS-1	2,088	-	Standard	200V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 200V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06DHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 600MA TS-1	5,598	Automotive, AEC-Q101	Standard	200V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 200V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1N5391G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO204AC	6,678	-	Standard	50V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5391GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO204AC	3,600	Automotive, AEC-Q101	Standard	50V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5392GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO204AC	5,112	Automotive, AEC-Q101	Standard	100V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5393GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO204AC	7,164	Automotive, AEC-Q101	Standard	200V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5395G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO204AC	7,740	-	Standard	400V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5397GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO204AC	2,340	Automotive, AEC-Q101	Standard	600V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5398G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO204AC	2,106	-	Standard	800V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5398GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO204AC	2,196	Automotive, AEC-Q101	Standard	800V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5400G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	3,454	-	Standard	50V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5400GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	8,136	Automotive, AEC-Q101	Standard	50V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5401G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO201AD	7,308	-	Standard	100V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5402G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	6,624	-	Standard	200V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5402GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	5,220	Automotive, AEC-Q101	Standard	200V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5404GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	5,634	Automotive, AEC-Q101	Standard	400V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

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