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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

Records 34,936

Page 1080/1165

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
UF1MHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	3,060	Automotive, AEC-Q101	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4001 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	2,736	-	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4001HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	7,812	Automotive, AEC-Q101	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4002HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	7,866	Automotive, AEC-Q101	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4003HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	6,678	Automotive, AEC-Q101	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4004HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	8,496	Automotive, AEC-Q101	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4005 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	7,830	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4005HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	8,316	Automotive, AEC-Q101	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4006HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	7,542	Automotive, AEC-Q101	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4007HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	5,256	Automotive, AEC-Q101	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1T1G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	4,428	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T2G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	2,322	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T3G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	6,984	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T4G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	2,430	-	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T5G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	7,128	-	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T6G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	5,778	-	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T1G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	3,924	-	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T1GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	3,870	Automotive, AEC-Q101	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T2G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	2,808	-	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T2GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	3,042	Automotive, AEC-Q101	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T3G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	3,312	-	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T3GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	6,012	Automotive, AEC-Q101	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T4GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	6,048	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T5G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	2,034	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T5GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	2,574	Automotive, AEC-Q101	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T6G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	2,196	-	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T6GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	4,212	Automotive, AEC-Q101	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T7G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	7,218	-	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T7GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	8,820	Automotive, AEC-Q101	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT110 A1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A TS-1	6,210	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C

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