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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1050/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RS1DL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
7,830
-
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1DL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
4,608
-
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1DLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
3,544
Automotive, AEC-Q101
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1DLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
3,420
Automotive, AEC-Q101
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
6,336
-
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
6,120
-
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
3,222
Automotive, AEC-Q101
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
3,526
Automotive, AEC-Q101
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1JL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
2,214
-
Standard
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1JLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
7,992
Automotive, AEC-Q101
Standard
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
6,048
-
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
5,238
-
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
2,232
Automotive, AEC-Q101
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
6,012
Automotive, AEC-Q101
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1ML M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800MA SUB SMA
8,064
-
Standard
-
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1ML MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800MA SUB SMA
2,700
-
Standard
-
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFAL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
8,928
-
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFAL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
5,868
-
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFALHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
7,380
Automotive, AEC-Q101
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFALHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
5,814
Automotive, AEC-Q101
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
7,344
-
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
8,586
-
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
3,472
Automotive, AEC-Q101
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
4,014
Automotive, AEC-Q101
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
6,660
-
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
6,948
-
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
4,122
Automotive, AEC-Q101
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
2,682
Automotive, AEC-Q101
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFGL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
6,966
-
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFGL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
3,544
-
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C