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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1049/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
ES1HL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 1A SUB SMA
4,374
-
Standard
500V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1HL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 1A SUB SMA
7,866
-
Standard
500V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1HM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 1A DO214AC
3,942
Automotive, AEC-Q101
Standard
500V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
16pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1JL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
5,400
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1JLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
4,086
Automotive, AEC-Q101
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES2HM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 2A DO214AA
3,186
Automotive, AEC-Q101
Standard
500V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS1AL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
7,398
-
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1AL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
4,338
-
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1BL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
2,268
-
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1BL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
7,578
-
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1DL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
7,236
-
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1DL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
5,742
-
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1FL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
6,120
-
Standard
300V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1FL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
8,172
-
Standard
300V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1GL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
7,362
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1GL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
4,968
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1JL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
2,268
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
15pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1JL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
7,794
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
15pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1KL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SUB SMA
2,988
-
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
15pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1KL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SUB SMA
8,262
-
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
15pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1ML M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A SUB SMA
5,688
-
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
15pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1ML MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A SUB SMA
2,088
-
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
15pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1AL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 800MA SUB SMA
6,876
-
Standard
50V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1AL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 800MA SUB SMA
5,382
-
Standard
50V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1ALHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 800MA SUB SMA
4,464
Automotive, AEC-Q101
Standard
50V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1ALHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 800MA SUB SMA
3,384
Automotive, AEC-Q101
Standard
50V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1BL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
2,124
-
Standard
100V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1BL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
5,202
-
Standard
100V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1BLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
4,914
Automotive, AEC-Q101
Standard
100V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1BLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
3,546
Automotive, AEC-Q101
Standard
100V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C