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VS-GT100TP60N

VS-GT100TP60N

For Reference Only

Part Number VS-GT100TP60N
PNEDA Part # VS-GT100TP60N
Description IGBT 600V 160A 417W INT-A-PAK
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 2,628
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-GT100TP60N Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-GT100TP60N
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
VS-GT100TP60N, VS-GT100TP60N Datasheet (Total Pages: 7, Size: 185.14 KB)
PDFVS-GT100TP60N Datasheet Cover
VS-GT100TP60N Datasheet Page 2 VS-GT100TP60N Datasheet Page 3 VS-GT100TP60N Datasheet Page 4 VS-GT100TP60N Datasheet Page 5 VS-GT100TP60N Datasheet Page 6 VS-GT100TP60N Datasheet Page 7

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VS-GT100TP60N Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
IGBT TypeTrench
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)160A
Power - Max417W
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 100A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce7.71nF @ 30V
InputStandard
NTC ThermistorNo
Operating Temperature175°C (TJ)
Mounting TypeChassis Mount
Package / CaseINT-A-PAK (3 + 4)
Supplier Device PackageINT-A-PAK

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