VS-GT100TP60N Datasheet
VS-GT100TP60N Datasheet
Total Pages: 7
Size: 185.14 KB
Vishay Semiconductor Diodes Division
This datasheet covers 1 part numbers:
VS-GT100TP60N
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type Trench Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 160A Power - Max 417W Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A Current - Collector Cutoff (Max) 5mA Input Capacitance (Cies) @ Vce 7.71nF @ 30V Input Standard NTC Thermistor No Operating Temperature 175°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-PAK (3 + 4) Supplier Device Package INT-A-PAK |
