VS-GT100TP120N
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For Reference Only
Part Number | VS-GT100TP120N |
PNEDA Part # | VS-GT100TP120N |
Description | IGBT 1200V 180A 652W INT-A-PAK |
Manufacturer | Vishay Semiconductor Diodes Division |
Unit Price | Request a Quote |
In Stock | 5,220 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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VS-GT100TP120N Resources
Brand | Vishay Semiconductor Diodes Division |
ECAD Module |
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Mfr. Part Number | VS-GT100TP120N |
Category | Semiconductors › Transistors › Transistors - IGBTs - Modules |
Datasheet |
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VS-GT100TP120N Specifications
Manufacturer | Vishay Semiconductor Diodes Division |
Series | - |
IGBT Type | Trench |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 180A |
Power - Max | 652W |
Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 100A |
Current - Collector Cutoff (Max) | 5mA |
Input Capacitance (Cies) @ Vce | 12.8nF @ 30V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 175°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | INT-A-PAK (3 + 4) |
Supplier Device Package | INT-A-PAK |
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