VS-GT100TP120N Datasheet
VS-GT100TP120N Datasheet
Total Pages: 7
Size: 183.81 KB
Vishay Semiconductor Diodes Division
This datasheet covers 1 part numbers:
VS-GT100TP120N
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type Trench Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 180A Power - Max 652W Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 100A Current - Collector Cutoff (Max) 5mA Input Capacitance (Cies) @ Vce 12.8nF @ 30V Input Standard NTC Thermistor No Operating Temperature 175°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-PAK (3 + 4) Supplier Device Package INT-A-PAK |
